Compact modeling of process variations in nanosheet complementary FET (CFET) and circuit performance predictions
X Yang, Y Sun, X Li, Y Shi, Z Liu - IEEE Transactions on …, 2023 - ieeexplore.ieee.org
In this work, a semi-analytical compact model of random process fluctuations in nanosheet
(NS) gate-all-around (GAA) complementary FET (CFET) is proposed, including work …
(NS) gate-all-around (GAA) complementary FET (CFET) is proposed, including work …
Analysis and characterization of layout dependent effect for advance FinFET circuit design
Z Wang, L Chen, M Yin - Microelectronics Journal, 2022 - Elsevier
Layout dependent effects (LDEs) will cause electrical variation of FinFET circuits and even
lead to manufacture failure in advanced technology stage. In this paper, we study the stress …
lead to manufacture failure in advanced technology stage. In this paper, we study the stress …