Over 3.0 Figure-of-Merit GaN pn Junction Diodes on Free-Standing GaN Substrates
Y Hatakeyama, K Nomoto, N Kaneda… - IEEE electron device …, 2011 - ieeexplore.ieee.org
This letter describes a new two-step electrode process on p-GaN and characteristics of GaN
pn junction diodes on free-standing GaN substrates with low specific ON-resistance R οn …
pn junction diodes on free-standing GaN substrates with low specific ON-resistance R οn …
Over 1.0 kV GaN p–n junction diodes on free‐standing GaN substrates
K Nomoto, Y Hatakeyama, H Katayose… - … status solidi (a), 2011 - Wiley Online Library
This report describes the fabrication and characteristics of GaN p–n junction diodes on free‐
standing GaN substrates with low dislocation density. We have demonstrated GaN p–n …
standing GaN substrates with low dislocation density. We have demonstrated GaN p–n …
2D Material‐Based Vertical Double Heterojunction Bipolar Transistors with High Current Amplification
The heterojunction bipolar transistor (HBT) differs from the classical homojunction bipolar
junction transistor in that each emitter‐base‐collector layer is composed of a different …
junction transistor in that each emitter‐base‐collector layer is composed of a different …
AlGaN/GaN heterojunction bipolar transistor with selective-area grown emitter and improved base contact
L Zhang, Z Cheng, J Zeng, H Lu, L Jia… - … on Electron Devices, 2019 - ieeexplore.ieee.org
We report AlGaN/GaN npn heterojunction bipolar transistors (HBTs) on sapphire substrates
with selective-area grown AlGaN emitters by metal-organic chemical vapor deposition. Metal …
with selective-area grown AlGaN emitters by metal-organic chemical vapor deposition. Metal …
A gate-tunable symmetric bipolar junction transistor fabricated via femtosecond laser processing
BW Su, BW Yao, XL Zhang, KX Huang, DK Li… - Nanoscale …, 2020 - pubs.rsc.org
Two-dimensional (2D) bipolar junction transistors (BJTs) with van der Waals
heterostructures play an important role in the development of future nanoelectronics. Herein …
heterostructures play an important role in the development of future nanoelectronics. Herein …
High-responsivity GaN/InGaN heterojunction phototransistors
We report high-responsivity GaN/InGaN heterojunction phototransistors (HPTs) grown on
sapphire substrates. Under the ultraviolet (UV) photon illumination from the front side of the …
sapphire substrates. Under the ultraviolet (UV) photon illumination from the front side of the …
Working toward high-power GaN/InGaN heterojunction bipolar transistors
Abstract III-nitride (III-N) heterojunction bipolar transistors (HBTs) are a less-explored
electronic device technology due to the myriad research issues in material growth, device …
electronic device technology due to the myriad research issues in material growth, device …
NpN-GaN/InxGa1− xN/GaN heterojunction bipolar transistor on free-standing GaN substrate
Data and analysis are presented for NpN-GaN/InGaN/GaN double-heterojunction bipolar
transistors (HBTs) grown and fabricated on a free-standing GaN (FS-GaN) substrate in …
transistors (HBTs) grown and fabricated on a free-standing GaN (FS-GaN) substrate in …
[图书][B] Nano-semiconductors: devices and technology
K Iniewski - 2018 - taylorfrancis.com
With contributions from top international experts from both industry and academia, Nano-
Semiconductors: Devices and Technology is a must-read for anyone with a serious interest …
Semiconductors: Devices and Technology is a must-read for anyone with a serious interest …
GaN/InGaN Heterojunction Bipolar Transistors With
We report GaN/InGaN npn double-heterojunction bipolar transistors with the collector
current density (J_C)>16\hboxkA/cm^2 and the current gain (β)>24 grown on a sapphire …
current density (J_C)>16\hboxkA/cm^2 and the current gain (β)>24 grown on a sapphire …