The fabrication of next-generation semiconductor devices has created a need for low-
temperature (≤ 400 C) deposition of highly-conformal (> 95%) SiO 2, SiN x, and SiC films …

In this review, we discuss the progress of emerging dry processes for nanoscale fabrication
of high-aspect-ratio features, including emerging design technology for manufacturability …

Atomic layer deposition (ALD) is a popular deposition technique comprising two or more
sequential, self-limiting surface reactions, which make up an ALD cycle. Energy-enhanced …

Small-molecule inhibitors are promising for achieving area-selective atomic layer deposition
(ALD) due to their excellent compatibility with industrial processes. In this work, we report on …

A plasma-enhanced atomic layer deposition (ALD) process was developed for the growth of
SiN x thin films using Si2Cl6 and NH3 plasma. At substrate temperatures≤ 400° C, we show …

Room‐temperature atomic layer deposition (RT‐ALD) processes are of interest for
applications using temperature‐sensitive substrates. Challenges with RT‐ALD arise when …

Alumina thin film is typically studied as a model atomic layer deposition (ALD) process due
to its high dielectric constant, high thermal stability, and good adhesion on various wafer …

Atmospheric pressure spatial atomic layer deposition (AP S-ALD)-derived Al 2 O 3 films
were investigated on the growth temperatures (100° C∼ 200° C) and demonstrated as the …

The growth mechanism of the prototypical atomic layer deposition (ALD) process of Al 2 O 3
using Al (CH 3) 3 (TMA) and H 2 O has been revisited on the basis of insights obtained with …

In this work, we report on aluminum oxide (Al2O3) gas permeation barriers prepared by
spatial ALD (SALD) at atmospheric pressure. We compare the growth characteristics and …