In this paper, a back-illuminated (BSI) time-of-flight (TOF) sensor using 0.2 µm silicon-on-
insulator (SOI) complementary metal oxide semiconductor (CMOS) technology is developed …

A new pinned photodiode (PPD) CMOS image sensor with reverse biased p-type substrate
has been developed and characterized. The sensor uses traditional PPDs with one …

Teledyne e2v continues to develop sensors for ground-based and space applications.
These are back-thinned for high QE, exhibit low noise, and other high performance …

The traditional public art education model has many drawbacks. After all, this teaching
model is the most common teaching model. Most colleges and universities still rely on the …

A novel method is presented with the aim to perform minority carrier diffusion length map on
cross-sectional samples. The method is based on one Electron-Beam Induced Current …

The radiation hardness of a fully depleted pinned photodiode (PPD) CMOS image sensor
(CIS) has been evaluated with gamma and proton irradiations. The sensors employ an …

This article presents a stacked backside-illuminated (BSI) indirect time-of-flight (i-ToF) pixel
fabricated in a 65-nm CMOS image sensors (CIS) process. Transfer gate-induced lateral …

Imec is developing a CMOS compatible platform for fully depleted image sensors. Full
depletion allows enhancement of the charge collection speed, signal detectivity and …

Abstract e2v designs and manufactures a wide range of sensors for space and astronomy
applications. This includes high performance CCDs for X-ray, visible and near-IR …

A new pinned photodiode (PPD) CMOS image sensor (CIS) has been developed and
characterised. The sensor can be fully depleted by means of reverse bias applied to the …