Impact of fe material thickness on performance of raised source overlapped negative capacitance tunnel field effect transistor (NCTFET)
Abstract In this work, Raised Source gate overlapped negative capacitance tunnelling field
effect transistor (NC-TFET) is optimized for the first time to suppress the ambipolarity of TFET …
effect transistor (NC-TFET) is optimized for the first time to suppress the ambipolarity of TFET …
Superior Threshold-Voltage and On-Resistance Stability in GaN HEMTs Enabled by a Gate ESD Protection Circuit
A gate electrostatic discharge (ESD) protection circuit has recently been deployed in GaN p-
gate high electron mobility transistors (HEMTs) to enhance the gate robustness. This on-chip …
gate high electron mobility transistors (HEMTs) to enhance the gate robustness. This on-chip …
Investigation of Threshold Voltage Shift for SiC MOSFET in Switching Operation
Silicon carbide (SiC) MOSFETs has been applied in electrical vehicle (EV) for lower
conduction losses and higher efficiency. But long-term reliability issue especially, the …
conduction losses and higher efficiency. But long-term reliability issue especially, the …