Three-dimensional integrated metal-oxide transistors
The monolithic three-dimensional vertical integration of thin-film transistor (TFT)
technologies could be used to create high-density, energy-efficient and low-cost integrated …
technologies could be used to create high-density, energy-efficient and low-cost integrated …
Perovskite Co-doping LaNiO3 quantum dots modified NiO/BaTiO3 transparent pn junction towards photovoltaic enhancement via bmetallic synergism
D Wang, C Jia, R Wang, B He, J Cao, J Wang… - Surfaces and …, 2024 - Elsevier
Transparent device in perovskite Co-LaNiO 3 QDs modified NiO/BaTiO 3 is prepared via an
approach of sol-gel-annealing-chemical deposition method. The obtained NiO/Co-LaNiO 3 …
approach of sol-gel-annealing-chemical deposition method. The obtained NiO/Co-LaNiO 3 …
Towards first-principles predict of doped α-Ga2O3 based structural and electrical properties
J Liu, Y Zhang, Q Zhang, X Yang, Y Shen - Materials Today …, 2024 - Elsevier
The α-Ga 2 O 3 holds significant research value on high power device applications for its
superior breakdown voltage performance. However, research concerning the doping of α …
superior breakdown voltage performance. However, research concerning the doping of α …
Wide-range Threshold Voltage Tunable β-Ga2O3 FETs with a Sputtered AlScN Ferroelectric Gate Dielectric
In this study, we demonstrate a-Ga2O3 ferroelectric field-effect transistor (Fe-FET) using a
sputtered aluminum scandium nitride (AlScN) gate dielectric. The device exhibits a steep …
sputtered aluminum scandium nitride (AlScN) gate dielectric. The device exhibits a steep …