Design and performance of capping layers for extreme-ultraviolet multilayer mirrors

S Bajt, HN Chapman, N Nguyen, J Alameda… - Applied …, 2003 - opg.optica.org
Multilayer lifetime has emerged as one of the major issues for the commercialization of
extreme-ultraviolet lithography (EUVL). We describe the performance of an oxidation …

Design and performance of capping layers for EUV multilayer mirrors

S Bajt, HN Chapman, N Nguyen… - Emerging …, 2003 - spiedigitallibrary.org
The reflectance stability of multilayer coatings for extreme ultraviolet lithography (EUVL) in a
commercial tool environment is of utmost importance to ensure continuous exposures with …

Determination of layer structure in Mo/Si multilayers using soft X-ray reflectivity

MH Modi, GS Lodha, M Nayak, AK Sinha… - Physica B: Condensed …, 2003 - Elsevier
The soft X-ray reflectivity characterization of Mo/Si multilayer deposited by electron beam
evaporation is discussed. The measurements are performed on Indus-1 synchrotron storage …

Nucleation, growth, percolation, and amorphous to crystalline transition of ultrathin molybdenum films

M Nayak, GS Lodha, RV Nandedkar - Journal of applied physics, 2006 - pubs.aip.org
We report on the nucleation, growth, percolation, and crystalline transition of ultrathin layers
of molybdenum deposited on float glass substrate by in situ electrical properties. The …

Multilayer X-ray interference structures

VV Lider - Physics-Uspekhi, 2019 - iopscience.iop.org
Multilayer X-ray interference structures - IOPscience This site uses cookies. By continuing to
use this site you agree to our use of cookies. To find out more, see our Privacy and Cookies …

[PDF][PDF] Étude de l'implantation ionique dans les miroirs multicouches Mo/Si: application aux optiques diffractives

H Faik-Etienne - 2005 - core.ac.uk
La lithographie Extrême Ultra Violet (LEUV), utilisant des longueurs d'onde autour de 13 nm
(EUV), est la technique la plus prometteuse parmi les nouvelles générations de …

A comparative study of the interfacial roughness correlation and propagation in Mo/Si multilayers deposited using RF-magnetron sputtering on silicon, ule and zerodur …

M Putero-Vuaroqueaux, H Faik… - Journal of Physics …, 2002 - iopscience.iop.org
Mo/Si multilayer (ML) mirrors play a decisive role in an extreme-ultraviolet (EUV) lithography
process. In this study, the surface and interfacial roughness, as well as the lateral and …

Normal incidence (multilayer) collector contamination

DN Ruzic, SN Srivastava - EUV Lithography, 2008 - books.google.com
Current lithography using 193-nm light can be extended down to the 45-nm and even 32-nm
nodes using various resolution enhancement techniques such as immersion and double …

Absolute calibration of a 1.5 m grazing incidence monochromator for extreme ultraviolet (EUV) diagnostics of a plasma source

R Bista, H Merabet, R Bruch, S Fülling - Nuclear Instruments and Methods …, 2007 - Elsevier
We have calibrated a 1.5 m grazing incidence monochromator with the light of known
wavelength at the advanced light source (ALS) of the Lawrence Berkeley National …

Многослойные рентгеновские интерференционные структуры

ВВ Лидер - Успехи физических наук, 2019 - mathnet.ru
ВВЛидер, “Многослойные рентгеновские интерференционные структуры”, УФН, 189:11
(2019), 1137–1171; Phys. Usp., 62:11 (2019), 1063–1095 Успехи физических наук RUS ENG …