Semiconductor systems and methods may include a semiconductor processing chamber
having a gas box defining an access to the semiconductor processing chamber. The …

Semiconductor systems and methods may include a semi conductor processing chamber
having a gas box defining an access to the semiconductor processing chamber. The cham …

3, 969077 4006047 4, 190488 4.209. 357 4,214,946 4, 232060 4.234. 628 4,265.943
4,340,462 4,341,592 4,361,418 4,364,803 4,368.223 4, 374698 4,381,441 4,397,812 …

Described processing chambers may include a chamber housing at least partially defining
an interior region of the semiconductor processing chamber. The chambers may include a …

A method for processing substrate in a processing chamber that has at least one plasma
generating source and a gas source for providing a process gas into the chamber is …

A method for slope control of ion energy is described. The method includes receiving a
setting indicating that an etch operation is to be performed using a radio frequency (RF) …

Appl. No.: 14/200,779 In one aspect, a plasma etching apparatus is disclosed. The plasma
etching apparatus includes a chamber body having a process chamber adapted to receive a …

Processing methods may be performed to expose a contact region on a semiconductor
substrate. The methods may include selectively removing a first region of a silicon material …

Abstract Systems and methods for tunable workpiece biasing in a plasma reactor are
provided herein. In some embodiments, a system includes: a plasma chamber that performs …

Embodiments of the present technology may include a method of etching a substrate. The
method may include striking a plasma discharge in a plasma region. The method may also …