Alternative plasmonic materials: beyond gold and silver
Materials research plays a vital role in transforming breakthrough scientific ideas into next‐
generation technology. Similar to the way silicon revolutionized the microelectronics …
generation technology. Similar to the way silicon revolutionized the microelectronics …
[HTML][HTML] Conductive nitrides: Growth principles, optical and electronic properties, and their perspectives in photonics and plasmonics
The nitrides of most of the group IVb-Vb-VIb transition metals (TiN, ZrN, HfN, VN, NbN, TaN,
MoN, WN) constitute the unique category of conductive ceramics. Having substantial …
MoN, WN) constitute the unique category of conductive ceramics. Having substantial …
Valence electron concentration as an indicator for mechanical properties in rocksalt structure nitrides, carbides and carbonitrides
K Balasubramanian, SV Khare, D Gall - Acta Materialia, 2018 - Elsevier
First-principles calculations are employed to determine the mechanical properties of rock-
salt structure binary and ternary transition metal nitrides, carbides, and carbonitrides from …
salt structure binary and ternary transition metal nitrides, carbides, and carbonitrides from …
Stress and preferred orientation in nitride-based PVD coatings
G Abadias - Surface and Coatings Technology, 2008 - Elsevier
Nitride-based coatings are nowadays widely studied both from fundamental and
technological point of views due to their unique physical and mechanical properties. Among …
technological point of views due to their unique physical and mechanical properties. Among …
Influence of nitrogen concentration on electrical, mechanical, and structural properties of tantalum nitride thin films prepared via DC magnetron sputtering
Tantalum nitride thin films are grown on silicon wafers using a mixture of Ar/N2 using DC
magnetron sputtering. The influence of nitrogen concentration on various features of …
magnetron sputtering. The influence of nitrogen concentration on various features of …
Are (100) facets of transition metal carbonitrides suitable as electrocatalysts for nitrogen reduction to ammonia at ambient conditions?
Sustainable and energy-efficient ammonia production requires facile nitrogen reduction for
hydrogen preservation and inorganic fertilizers. A nitrogen reduction apparatus with optimal …
hydrogen preservation and inorganic fertilizers. A nitrogen reduction apparatus with optimal …
Energetics of point defects in rocksalt structure transition metal nitrides: Thermodynamic reasons for deviations from stoichiometry
K Balasubramanian, SV Khare, D Gall - Acta Materialia, 2018 - Elsevier
First principle calculations of point defect formation energies in group 3–6 transition metal
(Me) nitrides MeN x are employed to explain the thermodynamic reasons for the large …
(Me) nitrides MeN x are employed to explain the thermodynamic reasons for the large …
Epitaxial stabilization of oxides in thin films
OY Gorbenko, SV Samoilenkov, IE Graboy… - Chemistry of …, 2002 - ACS Publications
A survey of recent experimental results is given, presenting the growth of oxide epitaxial thin
films in P− T− x conditions, which are far from those necessary for the existence of …
films in P− T− x conditions, which are far from those necessary for the existence of …
Vacancy hardening in single-crystal layers
We investigate the effect of N vacancies on the mechanical properties of epitaxial δ-TiN x
(001) layers with x= 0.67–1.0. The relaxed lattice parameter increases linearly with x in good …
(001) layers with x= 0.67–1.0. The relaxed lattice parameter increases linearly with x in good …
Growth of single-crystal CrN on MgO (001): Effects of low-energy ion-irradiation on surface morphological evolution and physical properties
D Gall, CS Shin, T Spila, M Odén, MJH Senna… - Journal of Applied …, 2002 - pubs.aip.org
CrN layers, 0.5 μm thick, were grown on MgO (001) at T s= 570–775° C by ultrahigh vacuum
magnetically unbalanced magnetron sputter deposition in pure N 2 discharges at 20 mTorr …
magnetically unbalanced magnetron sputter deposition in pure N 2 discharges at 20 mTorr …