A charge-based compact model that includes the dynamic depletion behavior for arbitrary doped surrounding gate MOSFET (SRGMOSFET) is presented in this paper. The one …
In this report, we study nonlinear electrical behaviors found in vertical-architecture transistors based on wrap-around-gated gallium nitride (GaN) nanowires (NWs) by …
In this report, we study nonlinear electrical behaviors found in vertical-architecture transistors based on wrap-around-gated gallium nitride (GaN) nanowires (NWs) by …
In this work, the influences of different concentration of sodium hydroxide (NaOH)(3, 6 and 9 wt.%) on the flexural and impact properties of linear low-density polyethylene/date seeds …
The biocomposites from linear low-density polyethylene (LLDPE) and date seeds (DS) were successfully synthesized using extrusion and injuction molding process respectively. The …
In the recent development of advanced nanoelectronic devices, strain application on silicon Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) has been identified as a key …
Due to high gate electrostatic control and introduction of punch and plug process technology, the gate-all-around (GAA) transistor is very promising in, and apparently has …