Slowing down DNA translocation through solid-state nanopores by edge-field leakage

C Wang, S Sensale, Z Pan, S Senapati… - Nature …, 2021 - nature.com
Solid-state nanopores allow high-throughput single-molecule detection but identifying and
even registering all translocating small molecules remain key challenges due to their high …

Review–Silicon Based ISFETs: Architecture, Fabrication Process, Sensing Membrane, and Spatial Variation

A Gupta, S Sharma, R Goswami - ECS Journal of Solid State …, 2024 - iopscience.iop.org
The main characteristics of a good pH detecting system are higher sensitivity, ease of
manufacturing process, and a micro-system. Ion sensitive field effect transistors (ISFETs) …

Green Security: A Framework for Measurement and Optimization of Energy Consumption of Cybersecurity Solutions

S Brudni, S Anidgar, O Brodt, D Mimran… - 2024 IEEE 9th …, 2024 - ieeexplore.ieee.org
Information and communication technology (ICT) is playing an expanding and critical role in
our modern lives. Due to its proliferation, ICT has a significant impact on global energy …

Dependence of electrical characteristics of Junctionless FET on body material

A Talukdar, AK Raibaruah, KCD Sarma - Procedia computer science, 2020 - Elsevier
This paper presents a study on how body material properties affects the electrical
characteristics of a Junctionless field effect transistor (JLFET). The study is performed by …

Off‐State Current Improvement of Double‐Gate Junctionless Field‐Effect Transistor by Modifying Central Potential

KM Abrishami, AA Orouji - physica status solidi (a), 2023 - Wiley Online Library
This work presents a double‐gate junctionless metal‐oxide field‐effect transistor (JLT) in a
20 nm regime by modifying central potential. In the proposed device, the off‐state current is …

Surrounded Channel Junctionless Field Effect Transistor

N Das, KCD Sarma - 2020 International Conference on …, 2020 - ieeexplore.ieee.org
This paper presents the surrounded channel Junctionless field effect transistor (SCJLFET)
concept. A study on electrical characteristics of a SCJLFET is also presented. The gate is …

Parallel gated junctionless field effect transistor

AK Raibaruah, KCD Sarma - 2020 International conference on …, 2020 - ieeexplore.ieee.org
The present work is a novel structure of Junctionless field effect transistor obtained by
splitting the gate into two parts parallelly. The structure is termed as parallel gated structure …

Undoped Junctionless Field Effect Transistor

AK Raibaruah, A Talukdar… - 2020 International …, 2020 - ieeexplore.ieee.org
We present here characteristics study of an undoped Double gate Junctionless field effect
transistor (UnDGJLFET). The body of the device is intrinsic in nature. A comparative …

Study on Electrical Characteristics of Double gate Junctionless Field Effect Transistor With Triangle Shaped Spacer

A Baro, KCD Sarma - 2020 International Conference on …, 2020 - ieeexplore.ieee.org
A simulation study on electrical characteristics of a Double gate Junctionless field effect
transistor (JLFET) with triangle shaped spacer is reported. The structure consists of a spacer …

An Analytical Potential Model for Normally on Double Gate Junctionless Field Effect Transistor

A Talukdar, KCD Sarma - 2020 International Conference on …, 2020 - ieeexplore.ieee.org
One of the most important parameter of a device is electrostatic potential. A fully analytical
potential model shown the distribution of electrostatic potential in a Normally on Double gate …