High-brightness semiconductor laser sources for materials processing: stacking, beam shaping, and bars

HG Treusch, A Ovtchinnikov, X He… - IEEE Journal of …, 2000 - ieeexplore.ieee.org
A compact, reliable semiconductor laser source for materials processing, medical, and
pumping applications is described. This industrial laser source relies on a combination of …

Optimization of GaAsP-QWs for high-power diode lasers at 800 nm

H Wenzel, G Erbert, F Bugge, A Knauer… - In-Plane …, 2000 - spiedigitallibrary.org
Tensile-strained GaAsP quantum wells (QWs) embedded in AlGaAs waveguide and
cladding layers are an alternative approach for the wavelength range 700-800 nm. We will …

Optimization of AlGaInAs quantum well in semiconductor lasers

SP Abbasi, M Goodarzi, MH Mahdieh - Optical and Quantum Electronics, 2022 - Springer
In this paper, a diode laser design method based on optimization of the thickness and
material composition of the quantum well (QW) in order to achieve the minimum current …

Beam quality of high power 800 nm broad-area laser diodes with 1 and 2 μm large optical cavity structures

R Hülsewede, J Sebastian, H Wenzel, G Beister… - Optics …, 2001 - Elsevier
The beam quality of 800 nm AlGaAs/GaAsP broad-area (BA) laser diodes with large optical
cavity (LOC) waveguide structures was studied under high power conditions. The LOC …

Highly efficient reliable lasers for 830-nm wavelength range

A Ovtchinnikov, X He, M Kanskar, J Mott… - In-Plane …, 2000 - spiedigitallibrary.org
PROCEEDINGS OF SPIE Page 1 PROCEEDINGS OF SPIE SPIEDigitalLibrary.org/conference-proceedings-of-spie
Highly efficient reliable lasers for 830nm wavelength range Alexander Ovtchinnikov …