This study aims for a new 11T static random access memory (SRAM) cell that uses power
gating transistors and transmission gate for low leakage and reliable write operation. The …

This paper presents a fully integrated sub-1 V 3-lead wireless ECG System-on-Chip (SoC)
for wireless body sensor network applications. The SoC includes a two-channel ECG front …

This paper comparatively reviews sensing circuit designs for the most widely used
embedded memory, static random-access memory (SRAM). Many sensing circuits for SRAM …

This brief proposes the design of a low-voltage static random access memory (SRAM) for
biomedical chip applications. The SRAM is designed using a standard 8T bit cell, featuring a …

In order to meet the ultra-low power requirement of modern digital systems, voltage scaling
is a fruitful technique that is widely adopted. However, the voltage scaling at ultra-scaled …

Conventional hardened cells are not robust enough to single event upset (SEU) in 28nm
technology due to the scaling of the transistors. High soft error rate is caused by particle …

This work proposes an static random access memory (SRAM) with column-based split cell-
VSS (CS-CVSS), data-aware write-assist (DAWA), and enhanced read sensing margin in 28 …

Disclosed is a memory device. The memory device includes a bit-cell comprising a cross-
coupled inverter and pass gate transistor connected to data storage node of the cross …

The previously proposed average-8T static random access memory (SRAM) has a
competitive area and does not require a write-back scheme. In the case of an average-8T …

The modern semiconductor industry is evolving quite rapidly. Portable and mobile devices
are becoming smaller every day and there is also a growing demand for longer battery …