This article reviews the existing theoretical models describing the interface-induced
phenomena which affect the switching characteristics and dielectric properties of …

Piezoresponse force microscopy (PFM) has emerged as a powerful and versatile tool for
probing nanoscale phenomena in ferroelectric materials on the nanometer and micrometer …

With much excitement and great enthusiasm I introduce this thorough treatise on the major
aspects of domain and domain wall phenomena in ferroics, mostly ferroelectrics, a major …

Flexoelectricity was investigated as a function of temperature in paraelectric and ferroelectric
phases of barium titanate ceramic. The flexoelectric coefficient μ 12 was measured …

The material properties of Pb (Zr, Ti) O 3 (PZT) thin film with a LaNiO 3 (LNO) buffer layer on
an ultra-thin Ni-Cr-based austenitic steel metal foil substrate are systematically investigated …

Flexoelectricity is the generation of an electric field by a strain gradient via electro-
mechanical coupling. This effect was predicted theoretically by Kogan in 1964 [1] and …

Scanning force microscopy (SFM) has been used to perform nanoscale studies of the
switching behavior of Pb (Zr, Ti) O 3 thin films via the direct observation of their domain …

Nonvolatile, molecular multiferroic devices have now been demonstrated, but it is worth
giving some consideration to the issue of whether such devices could be a competitive …

The self-polarization effect in ferroelectric thin films has been studied for PZT films 0.5-1 µm
thick deposited by radio-frequency magnetron sputtering of various ferroelectric ceramic …

Oxygen vacancy in oxide ferroelectrics can be strongly coupled to the polar order via local
strain and electric fields, thus holding the capability of producing and stabilizing exotic …