Investigations on AlN/sapphire piezoelectric bilayer structure for high-temperature SAW applications

T Aubert, O Elmazria, B Assouar… - IEEE transactions on …, 2012 - ieeexplore.ieee.org
This paper explores the possibility of using AlN/sapphire piezoelectric bilayer structures for
high-temperature SAW applications. To determine the temperature stability of AlN …

c-axis orientation and piezoelectric coefficients of AlN thin films sputter-deposited on titanium bottom electrodes

A Ababneh, M Alsumady, H Seidel… - Applied Surface …, 2012 - Elsevier
Aluminum nitride (AlN) reactively sputter deposited from an aluminum target is an interesting
compound material due to its CMOS compatible fabrication process and its piezoelectric …

Oxide overlayer formation on sputtered ScAlN film exposed to air

M Li, H Lin, K Hu, Y Zhu - Applied Physics Letters, 2022 - pubs.aip.org
There has been much interest in developing scandium doped aluminum nitride (ScAlN) thin
films for use in electronic devices, due to their excellent piezoMEMS response, large …

Corrosion behaviour of AlN ceramics in LiF-LiCl-LiBr-Li molten salt at 500° C

J Zhang, J Huang, R Liu, G Luo, Q Shen - Corrosion Science, 2021 - Elsevier
Immersion tests of AlN in LiF-LiCl-LiBr-Li salt have been performed at 500° C to study the
corrosion behaviour of AlN. The results show that AlN initially corroded at a higher rate (2⋅ …

High-temperature harsh-environment saw sensor technology

MP Da Cunha - 2023 IEEE International Ultrasonics …, 2023 - ieeexplore.ieee.org
There is a significant interest and demand for robust sensor systems that can accurately
monitor important parameters such as temperature, strain, pressure, corrosion, and gas …

Thermal oxidation of lattice mismatched Al1-xInxN films on GaN

E Palmese, H Xue, R Song, JJ Wierer Jr - e-Prime-Advances in Electrical …, 2023 - Elsevier
Abstract Lattice-mismatched Al 1-x In x N layers grown on GaN and with varying x are
thermally oxidized to understand how alloy content affects the oxidation process and oxide …

Structural properties of AlN films with oxygen content deposited by reactive magnetron sputtering: XRD and XPS characterization

M García-Méndez, S Morales-Rodríguez… - Surface Review and …, 2011 - World Scientific
A set of aluminium nitride (AlN) and oxidized AlN (AlNO) thin films were grown with the
technique of direct current (dc) reactive magnetron sputtering. The main purpose of this …

Structure analysis of aluminium silicon manganese nitride precipitates formed in grain-oriented electrical steels

N Bernier, C Xhoffer, T Van De Putte, M Galceran… - Materials …, 2013 - Elsevier
We report a detailed structural and chemical characterisation of aluminium silicon
manganese nitrides that act as grain growth inhibitors in industrially processed grain …

Asymmetry of adsorption of oxygen at wurtzite AlN (0001) and surfaces: First-principles calculations

H Ye, G Chen, Y Zhu, SH Wei - Physical Review B—Condensed Matter and …, 2008 - APS
First-principles calculations are performed to study the adsorption of oxygen at wurtzite AlN
(0001) and (000 1¯) surfaces as a function of oxygen coverage. We find that the adsorption …

Oxidation kinetics of aluminum nitride at different oxidizing atmosphere

X Hou, KC Chou, X Zhong, S Seetharaman - Journal of Alloys and …, 2008 - Elsevier
In the present work, the oxidation kinetics of AlN powder was investigated by using
thermogravimetric analysis, X-ray diffraction (XRD) and scanning electron microscopy …