Contact resistances take a significant portion of on-state resistances of advanced Si CMOS
transistors. As a result, a metal–semiconductor contact resistivity (ρ c) of sub-10–8 Ω cm2 or …

Given that transistor dimensions are approaching atomic scale in metal–oxide–
semiconductor field-effect-transistors (MOSFETs), attaining low-contact resistivity (ρ c) …

Germanium has received increased research interest for use in next-generation CMOS
technology as its high carrier mobilities allow for enhanced device performance without …

Au-hyperdoped Si produced by ion implantation and pulsed laser melting exhibits sub-band-
gap absorption in the near infrared, a property that is interesting for Si photonics. However …

High purity germanium (HPGe) is the key material for gamma ray detectors production. Its
high purity level (⩽ 2· 10− 4 ppb of doping impurity) has to be preserved in the bulk during …

In advanced logic devices, access resistance to transistors is dominated by metal–
semiconductor contact resistivity. Recent studies report values below 1× 10− 9 ohm cm 2 …

The E centers (dopant-vacancy pairs) play a significant role in dopant deactivation in
semiconductors. In order to gain insight into dopant-defect interactions during epitaxial …

Full integration of Ge-based alloys like GeSn with complementary-metal-oxide-
semiconductor technology would require the fabrication of p-and n-type doped regions for …

The n-type doping of Ge is a self-limiting process due to the formation of vacancy-donor
complexes (D n V with n⩽ 4) that deactivate the donors. This work unambiguously …

A new method for the formation of hole-barrier contacts in high purity germanium (HPGe) is
described, which consists in the sputter deposition of a Sb film on HPGe, followed by Sb …