Wide-bandgap semiconductors and power electronics as pathways to carbon neutrality
Energy supply and consumption account for approximately 75% of global greenhouse gas
emissions. Advances in semiconductor and power electronics technologies are required to …
emissions. Advances in semiconductor and power electronics technologies are required to …
Switching figure-of-merit, optimal design, and power loss limit of (ultra-) wide bandgap power devices: A perspective
Power semiconductor devices are utilized as solid-state switches in power electronics
systems, and their overarching design target is to minimize the conduction and switching …
systems, and their overarching design target is to minimize the conduction and switching …
Recent developments in superjunction power devices
C Ma, W Chen, T Liu, W Zhang… - Journal of …, 2024 - iopscience.iop.org
Superjunction (SJ) is one of the most innovative concepts in the field of power
semiconductor devices and is often referred to as a" milestone" in power MOS. Its balanced …
semiconductor devices and is often referred to as a" milestone" in power MOS. Its balanced …
Low QCVF 20A/1.4kV β-Ga2O3 Vertical Trench High-k RESURF Schottky Barrier Diode with Turn-on Voltage of 0.5V
We present a-Ga2O3 Trench Schottky Barrier Diode (SBD) featuring a high-permittivity (high-
k) dielectric RESURF and an atomic layer-deposited (ALD) Ru anode contact to engineer …
k) dielectric RESURF and an atomic layer-deposited (ALD) Ru anode contact to engineer …
(Ultra-) wide-bandgap heterogeneous superjunction: Design, performance limit, and experimental demonstration
Superjunction (SJ) breaks the performance limit of conventional power devices via
multidimensional electrostatic engineering. Following a commercial success in Si, it has …
multidimensional electrostatic engineering. Following a commercial success in Si, it has …
Comparison and Investigation on the Static and Dynamic Performance for medium-voltage (3300 V-6500 V) Ga2O3 and SiC planar gate MOSFETs
Z Wang, L Yuan, B Peng, Y Zhang… - IEEE Transactions on …, 2024 - ieeexplore.ieee.org
The structural design, static, dynamic power losses and short-circuit robustness of vertical
Ga 2 O 3 planar gate MOSFETs for medium voltage (3300 V-6500 V) ratings are first …
Ga 2 O 3 planar gate MOSFETs for medium voltage (3300 V-6500 V) ratings are first …
Junction-based deep mesa termination for multi-kilovolt vertical β-Ga2O3 power devices
J Wan, H Wang, C Zhang, C Wang, H Cheng… - Applied Physics …, 2025 - pubs.aip.org
Deep mesa is an effective edge termination widely deployed in high-voltage power devices.
However, its effectiveness requires the minimal distance between mesa and electrode edge …
However, its effectiveness requires the minimal distance between mesa and electrode edge …
A Review of β-Ga2O3 Power Diodes
Y He, F Zhao, B Huang, T Zhang, H Zhu - Materials, 2024 - mdpi.com
As the most stable phase of gallium oxide, β-Ga2O3 can enable high-quality, large-size, low-
cost, and controllably doped wafers by the melt method. It also features a bandgap of 4.7 …
cost, and controllably doped wafers by the melt method. It also features a bandgap of 4.7 …
Novel superjunction Fin-based NiO/β-Ga2O3 HJFET with additional surface drift region channels for record-high performance
J Huang, W Chen, S Zhao, Q Yu, A Zhang, K Zhu… - Microelectronics …, 2024 - Elsevier
In this paper, a novel superjunction fin-based NiO/β-Ga 2 O 3 heterojunction field-effect
transistor (SJ Fin-HJFET) is proposed and studied by simulations. Compared with the …
transistor (SJ Fin-HJFET) is proposed and studied by simulations. Compared with the …
Kilovolt, Low-Barrier Ga2O3 JBS diode with Ultra-Low Forward Voltage
H Gong, N Sun, T Hu, M Porter, X Yu… - … Devices and ICs …, 2024 - ieeexplore.ieee.org
Gallium oxide (Ga_2O_3) has attracted extensive attention for next-generation power
devices. However, the reported Ga_2O_3 rectifiers typically exhibit high turn-on voltage …
devices. However, the reported Ga_2O_3 rectifiers typically exhibit high turn-on voltage …