Investigation on synthesis, growth, Hirshfeld surface and third order nonlinear optical properties of Urea-Succinic Acid single crystal: A potential candidate for self …
A wide optical band gap Urea-Succinic Acid (USA) single crystal was grown by using slow
evaporation solution growth techniques. The structural analysis of grown ingot has been …
evaporation solution growth techniques. The structural analysis of grown ingot has been …
Strain relaxation in InAs quantum dots through capping layer variation and its impact on the ultrafast carrier dynamics
Ultrafast carrier dynamics is found to be crucial for influencing the efficiency of quantum dot
(QD)-based optoelectronic devices. Here, we have studied picosecond resolved dynamics …
(QD)-based optoelectronic devices. Here, we have studied picosecond resolved dynamics …
Enhanced performance of in (Ga) as QD based optoelectronic devices through improved interface quality between QD and matrix material
The interface quality in InAs/GaAs and In0. 5Ga0. 5As/GaAs quantum dot (QD)
heterostructures are elucidated through the phonon‐assisted vibrational modes and is found …
heterostructures are elucidated through the phonon‐assisted vibrational modes and is found …
Exciton dissociation in an NIR-active triohybrid nanocrystal leading to efficient generation of reactive oxygen species
Lead sulfide (PbS) colloidal quantum dots (QDs) are emerging materials for fundamental
studies because of their potential application in near infrared (NIR) light harvesting …
studies because of their potential application in near infrared (NIR) light harvesting …
Realization of high-quality InGaAs/GaAs quantum dot growth on Ge substrate and improvement of optical property through ex-situ ion implantation
Epitaxial growth of III-V heterostructures on non-native substrates such as Silicon (Si) or
Germanium (Ge) is one of the promising research topics for the last two decades. The …
Germanium (Ge) is one of the promising research topics for the last two decades. The …