Compact modeling technology for the simulation of integrated circuits based on graphene field‐effect transistors
The progress made toward the definition of a modular compact modeling technology for
graphene field‐effect transistors (GFETs) that enables the electrical analysis of arbitrary …
graphene field‐effect transistors (GFETs) that enables the electrical analysis of arbitrary …
[HTML][HTML] Artificial Merkel discs in van der Waals heterostructures for bio-inspired tactile sensing
Mechanoreceptors, such as Merkel discs in the somatosensory system, play a crucial role in
converting mechanical stimuli into electrical signals, enabling spatial discrimination and …
converting mechanical stimuli into electrical signals, enabling spatial discrimination and …
Ultrahigh on‐current density of organic field‐effect transistors facilitated by molecular monolayer crystals
Organic semiconductor materials are not recognized as a system for high current density
applications due to the generally low mobility and high contact resistance. In this work …
applications due to the generally low mobility and high contact resistance. In this work …
Transient hot-carrier dynamics and intrinsic velocity saturation in monolayer
Drift velocity saturation (at some characteristic value, vd sat) is a critical process that limits
the ultimate current-carrying capacity of semiconductors at high electric fields (∼ 10 4 V/cm) …
the ultimate current-carrying capacity of semiconductors at high electric fields (∼ 10 4 V/cm) …
Experimental observation and modeling of the impact of traps on static and analog/HF performance of graphene transistors
A Pacheco-Sanchez, N Mavredakis… - … on Electron Devices, 2020 - ieeexplore.ieee.org
The trap-induced hysteresis on the performance of a graphene field-effect transistor is
experimentally diminished here by applying consecutive gate-to-source voltage pulses of …
experimentally diminished here by applying consecutive gate-to-source voltage pulses of …
Adsorbed Molecules as Interchangeable Dopants and Scatterers with a Van der Waals Bonding Memory in Graphene Sensors
OG Agbonlahor, M Muruganathan, T Imamura… - ACS …, 2020 - ACS Publications
Molecular adsorption-induced doping and scattering play a central role in the detection
mechanism of graphene gas sensors. However, while the doping contributions in electric …
mechanism of graphene gas sensors. However, while the doping contributions in electric …
In Situ Growth of Wafer‐Scale Patterned Graphene and Fabrication of Optoelectronic Artificial Synaptic Device Array Based on Graphene/n‐AlGaN Heterojunction for …
Y Chen, Z Shi, B Lv, W Zhang, S Zhang, H Zang, Y Yue… - Small, 2024 - Wiley Online Library
The unique optical and electrical properties of graphene‐based heterojunctions make them
significant for artificial synaptic devices, promoting the advancement of biomimetic vision …
significant for artificial synaptic devices, promoting the advancement of biomimetic vision …
Transient response of h-BN-encapsulated graphene transistors: signatures of self-heating and hot-carrier trapping
We use transient electrical measurements to investigate the details of self-heating and
charge trapping in graphene transistors encapsulated in hexagonal boron nitride (h-BN) and …
charge trapping in graphene transistors encapsulated in hexagonal boron nitride (h-BN) and …
Effects of Self-Heating on and Performance of Graphene Field-Effect Transistors
It has been shown that there can be a significant temperature increase in graphene field-
effect transistors (GFETs) operating under high drain bias, which is required for power gain …
effect transistors (GFETs) operating under high drain bias, which is required for power gain …
Does carrier velocity saturation help to enhance f max in graphene field-effect transistors?
It has been argued that current saturation in graphene field-effect transistors (GFETs) is
needed to get optimal maximum oscillation frequency (fmax). This paper investigates …
needed to get optimal maximum oscillation frequency (fmax). This paper investigates …