AlGaN-based materials own direct transition energy bands and wide bandgap and thus can
be used in high-efficiency ultraviolet (UV) emitters and detectors. Over the past two decades …

A preliminary on-chip integration of GaN-based laser, modulator, and photodetector grown
on Si is reported. The modulator is integrated into the laser and shares the same InGaN …

Whispering gallery mode (WGM) cavities provide resonance configurations for light
propagation through internal reflection, achieving high Q factors, low thresholds, and small …

Diamond heat-spreaders for gallium nitride (GaN) devices currently depend upon a robust
wafer bonding process. Bonding-free membrane methods demonstrate potential, however …

We propose, fabricate, and characterize the on-chip integration of suspended pn junction
InGaN/GaN multiple quantum wells (MQWs) device and multiple waveguides on the same …

We propose, fabricate and demonstrate on-chip photonic integration of suspended
InGaN/GaN multiple quantum wells (MQWs) devices on the GaN-on-silicon platform. Both …

This paper presents the design, fabrication, and experimental characterization of
monolithically integrated pn junction InGaN/GaN multiple quantum well diodes (MQWDs) …

The integration of III‐nitride electronics and photonics is of great interest toward future
computing systems with low power consumption. Multifunctioning multiple quantum well …

Optical gain and loss of microcavity greatly affect the quality of lasing, how to improve optical
gain and decrease optical loss is of great significance for the preparation of laser. In this …

We propose, fabricate, and demonstrate integrated p–n junction InGaN/GaN multiple-
quantum-well devices with diverse functionalities on a GaN-on-silicon platform. Suspended …