Review of the thermoelectric properties of layered oxides and chalcogenides

AI Romanenko, GE Chebanova, T Chen… - Journal of Physics D …, 2021 - iopscience.iop.org
The current state of investigation on thermoelectric properties of layered chalcogenides and
oxides is considered. The relationship between the quasi-two-dimensionality of electronic …

The origin of ultra-low thermal conductivity of the Bi2Te2S compound and boosting the thermoelectric performance via carrier engineering

Q Tao, F Meng, Z Zhang, Y Cao, Y Tang, J Zhao… - Materials Today …, 2021 - Elsevier
In this study, a series of Bi 2 Te 2-x S 1+ x compounds were prepared by traditional melting-
quenching-annealing process. In the range of 0.03≤ x≤ 0.25, Bi 2 Te 2-x S 1+ x …

Thermoelectric properties of anisotropy-controlled p-type Bi–Te–Sb system via bulk mechanical alloying and shear extrusion

SS Kim, S Yamamoto, T Aizawa - Journal of alloys and compounds, 2004 - Elsevier
Shear extrusion processing with combination of bulk mechanical alloying is proposed to
yield the p-type Bi–Te–Sb materials from elemental granules. It has a well-developed texture …

Thermoelectric Properties of Single-Phase n-Type Bi14Te13S8

R Fortulan, S Aminorroaya Yamini, A Juri… - ACS Applied …, 2024 - ACS Publications
Bismuth telluride (Bi2Te3) and its alloys are among the best thermoelectric materials at room
temperature. Bi14Te13S8, a material with a similar crystal structure, contains sulfur that can …

Thermoelectric properties and phase transition of doped single crystals and polycrystals of Bi2Te3

AI Romanenko, GE Chebanova… - Journal of the …, 2021 - Wiley Online Library
The temperature dependences of the electrical conductivity, Seebeck coefficient, and heat
capacity Cp (T) of polycrystalline samples of Bi2Te3, Bi2Te3+ 1% CuI, and Bi2Te3+ …

Mechanisms of spiral growth in Bi2Te3 thin films grown by the hot-wall-epitaxy technique

M Ferhat, JC Tedenac, J Nagao - Journal of crystal growth, 2000 - Elsevier
The hot-wall-epitaxy (HWE) technique was used to deposit Bi2Te3 thin films on amorphous
(kapton and SiO2) substrates. It was found that the growth proceeds under low …

Semiconductor parameters of Bi2Te3 single crystal

MM Nassary, HT Shaban, MS El-Sadek - Materials Chemistry and Physics, 2009 - Elsevier
Single crystals of Bi2Te3 were prepared by a modified Bridgman method. The as-prepared
Bi2Te3 was investigated by X-ray diffraction (XRD). Anisotropic phenomena in the layered …

Thermoelectricity for crystallographic anisotropy controlled Bi–Te based alloys and p–n modules

SS Kim, F Yin, Y Kagawa - Journal of alloys and compounds, 2006 - Elsevier
The p-type (Bi2Te3) 0.2 (Sb2Te3) 0.8 and n-type (Bi2Se3) 0.05 (Bi2Te3) 0.95 alloys were
fabricated by the shear extrusion to enhance texture evolution. Transverse Direction (TD) …

In Situ Temperature-Dependent Transmission Electron Microscopy Studies of Pseudobinary mGeTe·Bi2Te3 (m = 3–8) Nanowires and First-Principles Calculations

CS Jung, HS Kim, HS Im, K Park, J Park, JP Ahn… - Nano …, 2015 - ACS Publications
Phase-change nanowires (NWs) have emerged as critical materials for fast-switching
nonvolatile memory devices. In this study, we synthesized a series of m GeTe· Bi2Te3 (GBT) …

Characteristics of thermoelectric power modules based on p-type Na (Co0. 95Ni0. 05) 2O4 and n-type Zn0. 99Sn0. 01O

K Park, JW Choi, CW Lee - Journal of alloys and compounds, 2009 - Elsevier
The major phase of as-sintered p-type Na (Co0. 95Ni0. 05) 2O4 was a solid solution of the
constituent oxides, along with a small amount of NaNiO2. As-sintered n-type Zn0. 99Sn0 …