The characteristic effects of doping with impurities such as Si, Ge, Se, O, Mg, Be, and Zn on
the electrical and optical properties of GaN-based materials are reviewed. In addition, the …

The bulk trap-induced component of current collapse (CC) in GaN/AlGaN heterojunction
field-effect transistors is studied in drift diffusion simulations, distinguishing between …

The two deep traps responsible for current collapse in AlGaN/GaN high electron mobility
transistors grown by metalorganic vapor-phase epitaxy have been studied by …

A systematic study of GaN-based heterostructure field-effect transistors with an insulating
carbon-doped GaN back barrier for high-voltage operation is presented. The impact of …

The role of C introduced as an impurity into GaN is an unsettled issue, despite a
considerable amount of experimental effort on this system. Part of the impetus for this work …

This review is concerned with the characterization and identification of the deep centres that
cause current collapse in nitride-based field effect transistors. Photoionization spectroscopy …

First-principles theoretical results are presented for substitutional and interstitial carbon in
wurtzite GaN. Carbon is found to be a shallow acceptor when substituted for nitrogen (CN) …

We analyze electron scattering from phonons, ionized impurities, line dislocations, and
interface roughness at an Al x Ga 1− x N∕ GaN interface. These mechanisms are …

Carbon doping via CBr 4 in AlGaN/GaN high electron mobility transistors grown by rf-plasma-
assisted molecular beam epitaxy on 4H–SiC (0001) was investigated as a means to reduce …

The properties of carbon-doped GaN epilayers grown by molecular-beam epitaxy have
been studied by temperature-dependent resistivity, Hall-effect measurements, x-ray …