The demand for high-performance devices that are used in electrochemical energy
conversion and storage has increased rapidly. Tremendous efforts, such as adopting new …

Area selective deposition (ASD) is a bottom-up process leading to a uniform deposition in
only desired areas of a patterned substrate, avoiding the use of photolithography for …

The focus of this study was to demonstrate the vapor-phase halogenation of Si (100) and
subsequently evaluate the inhibiting ability of the halogenated surfaces toward atomic layer …

As atomic layer deposition (ALD) emerges as a method to fabricate architectures with atomic
precision, emphasis is placed on understanding surface reactions and nucleation …

Ruthenium (Ru) has emerged as a promising material for microelectronic applications that
require precise modification and patterning of thin films at the nanoscale. However, the …

Area‐selective atomic layer deposition (ASD) is a bottom‐up process that is of particular
importance in the semiconductor industry, as it prevents edge defects and avoids cost …

The evolution of the surface during the steps that comprise the atomic layer deposition (ALD)
of ruthenium films on a nickel substrate using tris (2, 2, 6, 6-tetramethyl-3, 5-heptanedionato) …

In this perspective we discuss the progress made in the mechanistic studies of the surface
chemistry associated with the atomic layer deposition (ALD) of metal films and the …

Patterning of ruthenium (Ru) in the microelectronics industry has become important because
of novel Ru applications, including back-end-of-line metallization. Selective etching and …

Abstract Ruthenium (Ru) nanofilms (< 3 nm) were prepared using tricarbonyl
(trimethylenemethane) ruthenium, Ru (TMM)(CO) 3 at 230 C. We show that the surface …