Sub-10 nm two-dimensional transistors: Theory and experiment

R Quhe, L Xu, S Liu, C Yang, Y Wang, H Li, J Yang… - Physics Reports, 2021 - Elsevier
Presently Si-based field-effect transistors (FETs) are approaching their physical limit, and
further scaling their gate length down to the sub-10 nm region is becoming extremely …

Phosphorene—an emerging two-dimensional material: recent advances in synthesis, functionalization, and applications

V Chaudhary, P Neugebauer, O Mounkachi… - 2D …, 2022 - iopscience.iop.org
Abstract Two-dimensional (2D) materials are the focal point of intensive research efforts due
to their unique properties and ability to reveal fascinating new phenomena. As an analog to …

Performance limit of monolayer MoSi 2 N 4 transistors

X Sun, Z Song, N Huo, S Liu, C Yang, J Yang… - Journal of Materials …, 2021 - pubs.rsc.org
Recently, a novel two-dimensional (2D) MoSi2N4 has been successfully synthesized and
features high carrier mobility, moderate bandgap, and outstanding ambient stability (Science …

Transport properties of 5-nm tunnel field-effect transistor for high-performance switches decorated with blue phosphorene and transition metals

XD Huang, Q Liu, HQ Xie, XQ Deng… - … on Electron Devices, 2023 - ieeexplore.ieee.org
Enhancing the band-to-band tunneling (BTBT) is the most effective method to improve the
performance of the tunnel field effect transistors (TFETs). In this article, the transport …

[HTML][HTML] Two-dimensional pnictogen for field-effect transistors

W Zhou, J Chen, P Bai, S Guo, S Zhang, X Song, L Tao… - Research, 2019 - spj.science.org
Abstract Two-dimensional (2D) layered materials hold great promise for various future
electronic and optoelectronic devices that traditional semiconductors cannot afford. 2D …

Defect engineering of black phosphorene towards an enhanced polysulfide host and catalyst for lithium-sulfur batteries: A first principles study

H Lin, DD Yang, N Lou, AL Wang, SG Zhu… - Journal of Applied …, 2019 - pubs.aip.org
Although lithium-sulfur (Li-S) batteries are widely regarded as one of the most promising
next-generation high energy density storage systems, their large-scale applications are …

Performance enhancement of an ultra-scaled double-gate graphene nanoribbon tunnel field-effect transistor using channel doping engineering: Quantum simulation …

K Tamersit - AEU-International Journal of Electronics and …, 2020 - Elsevier
In this paper, new graphene nanoribbon tunnel field-effect transistors (GNRTFETs) endowed
with specific doping profiles are proposed, assessed, and compared with the conventional …

Sub-10 nm tunneling field-effect transistors based on monolayer group IV mono-chalcogenides

H Li, P Xu, J Lu - Nanoscale, 2019 - pubs.rsc.org
The development of air-stable channels with a high on-state current (Ion) is in high demand
for the feasible application of TFETs. Monolayer group IV mono-chalcogenides (ie, GeS …

Lifting on-state currents for GeS-based tunneling field-effect transistors with electrode optimization

H Li, Q Wang, F Liu, J Lu - Applied Surface Science, 2022 - Elsevier
Tunneling field-effect transistors (TFETs) arouse great enthusiasm for energy-efficient
switching devices attributed to their steep subthreshold swing (SS), yet their low on-state …

[HTML][HTML] WS2 Nanosheet-Based Ultrascaled Field-Effect Transistor for Hydrogen Gas Sensing: Addressing the Sensitivity-Downscaling Trade-Off

K Tamersit - Sensors, 2024 - mdpi.com
In this paper, we propose an ultrascaled WS2 field-effect transistor equipped with a Pd/Pt
sensitive gate for high-performance and low-power hydrogen gas sensing applications. The …