In this work, two types of InGaZnO (IGZO) memristors were fabricated to confirm the
conduction mechanism and degradation characteristics of memristors with different …

We conducted research to create reverse synapse plasticity using metal oxide
semiconductor-based field-effect transistors. Specifically, we used IGZO as the channel, Al 2 …

We present a study on characteristics of operating region-dependent weight updates in a
synaptic thin-film transistor (Syn-TFT) with an amorphous In–Ga–Zn–O (IGZO) channel layer …

In this paper, we present a study on a retention characteristics dependent on a high-gate
insulator stack in synaptic thin-film transistors (Syn-TFTs) with a Hf-ZnO channel layer. A …

Inspired by the human visual system, optoelectronic synaptic transistors have recently
received a great deal of attention as promising candidates for next-generation neuromorphic …

In this study, we design an IGZO/ZnO/IGZO-based synaptic transistor to implement robust
reservoir computing. Short-term memory characteristics are achieved using the charge …

Synaptic devices are essential for constructing neuromorphic computing. For the current
synaptic transistors, their gate dielectrics are always required to possess special functions …

Despite the importance of transistors in modern electronics, transistor characterization
requires expensive instruments that are not affordable for many researchers, engineers and …

We report the fabrication of flexible photonic synapses using vertically grown ZnO
nanotubes on graphene layers. Position-and morphology-controlled ZnO nanotubes were …

Amorphous InGaZnO (a-IGZO) has attracted a lot of attention as a high-mobility channel
material for thin film transistors (TFTs). However, the instability mechanism involving …