Si–Ge–Sn alloys: From growth to applications
In this review article, we address key material parameters as well as the fabrication and
application of crystalline GeSn binary and SiGeSn ternary alloys. Here, the transition from an …
application of crystalline GeSn binary and SiGeSn ternary alloys. Here, the transition from an …
Growth and applications of GeSn-related group-IV semiconductor materials
S Zaima, O Nakatsuka, N Taoka… - … and technology of …, 2015 - iopscience.iop.org
We review the technology of Ge 1− x Sn x-related group-IV semiconductor materials for
developing Si-based nanoelectronics. Ge 1− x Sn x-related materials provide novel …
developing Si-based nanoelectronics. Ge 1− x Sn x-related materials provide novel …
Monolithic infrared silicon photonics: The rise of (Si) GeSn semiconductors
(Si) GeSn semiconductors are finally coming of age after a long gestation period. The
demonstration of device-quality epi-layers and quantum-engineered heterostructures has …
demonstration of device-quality epi-layers and quantum-engineered heterostructures has …
[HTML][HTML] An optically pumped 2.5 μm GeSn laser on Si operating at 110 K
S Al-Kabi, SA Ghetmiri, J Margetis, T Pham… - Applied Physics …, 2016 - pubs.aip.org
This paper reports the demonstration of optically pumped GeSn edge-emitting lasers grown
on Si substrates. The whole device structures were grown by an industry standard chemical …
on Si substrates. The whole device structures were grown by an industry standard chemical …
Si-based GeSn lasers with wavelength coverage of 2–3 μm and operating temperatures up to 180 K
A Si-based monolithic laser is strongly desired for the full integration of Si-photonics. Lasing
from the direct bandgap group-IV GeSn alloy has opened a new avenue, different from the …
from the direct bandgap group-IV GeSn alloy has opened a new avenue, different from the …
Low-threshold optically pumped lasing in highly strained germanium nanowires
The integration of efficient, miniaturized group IV lasers into CMOS architecture holds the
key to the realization of fully functional photonic-integrated circuits. Despite several years of …
key to the realization of fully functional photonic-integrated circuits. Despite several years of …
Electronic band structure and effective mass parameters of Ge1-xSnx alloys
This work investigates the electronic band structures of bulk Ge 1-x Sn x alloys using the
empirical pseudopotential method (EPM) for Sn composition x varying from 0 to 0.2. The …
empirical pseudopotential method (EPM) for Sn composition x varying from 0 to 0.2. The …
Increased photoluminescence of strain-reduced, high-Sn composition Ge1− xSnx alloys grown by molecular beam epitaxy
We synthesized up to Ge 0.914 Sn 0.086 alloys on (100) GaAs/In y Ga 1− y As buffer layers
using molecular beam epitaxy. The buffer layers enable engineered control of strain in the …
using molecular beam epitaxy. The buffer layers enable engineered control of strain in the …
Strain-Balanced Multiple-Quantum-Well Lasers
GE Chang, SW Chang… - IEEE journal of Quantum …, 2010 - ieeexplore.ieee.org
We propose and analyze a strain-balanced Ge z Sn 1-z-Si x Ge y Sn 1-xy multiple-quantum-
well (MQW) laser. By incorporating a proper amount of-Sn into Ge, a direct-bandgap GeSn …
well (MQW) laser. By incorporating a proper amount of-Sn into Ge, a direct-bandgap GeSn …
Band structure calculations of Si–Ge–Sn alloys: achieving direct band gap materials
P Moontragoon, Z Ikonić… - … science and technology, 2007 - iopscience.iop.org
Alloys of silicon (Si), germanium (Ge) and tin (Sn) are continuously attracting research
attention as possible direct band gap semiconductors with prospective applications in …
attention as possible direct band gap semiconductors with prospective applications in …