Aerospace equipages encounter potential radiation footprints through which soft errors
occur in the memories onboard. Hence, robustness against radiation with reliability in …

Radiation hardness of FinFET and stacked nanowire (NW) static random-access memory
(SRAM), with LG= 20 nm, which corresponds to high-density 5 nm technology node, is …

Along with radiation sensing, necessity to study and design reliable radiation hardened
devices is also increasing now-a-days. These devices are tolerant to high dosage of …

Introduction of new conduction mechanism called junctionless in MOSFETs takes us to
another direction in device fabrication. Moving from inversion to junctionless devices in …

This paper proposes GaAs junctionless (JL)-FinFET for high-performance applications.
Results are so obtained and compared with conventional JL-FinFET. FinFET is designed …

We investigate the circuit performance of the junctionless nanowire transistor. We have
demonstrated pass transistor-based logic gates using the junctionless transistor. Pass …

Due to the emerging of novel technologies, such as stacked horizontal nanowires, and novel
3D integration schemes, such as stacking PMOS on top of NMOS, multiple transistors in a …

This paper proposes GaAs junctionless FinFET which is compared with Si and Ge based
junctionless FinFET and shows significant improvement. It is designed using metal gate and …

The characteristics and mechanism of single-event transients in silicon-on-insulator (SOI) fin
field-effect transistors (FinFETs) were analyzed using Sentaurus technology computer-aided …

The total dose effect of 60 Co γ-rays on 0.8-μm H-gate partially depleted-silicon-on-insulator
NMOS devices was investigated at different irradiation doses. The results show that the shift …