Correlation between luminescence and structural properties of Si nanocrystals
Strong room-temperature photoluminescence (PL) in the wavelength range 650–950 nm
has been observed in high temperature annealed (1000–1300° C) substoichiometric silicon …
has been observed in high temperature annealed (1000–1300° C) substoichiometric silicon …
An interface clusters mixture model for the structure of amorphous silicon monoxide (SiO)
The present state of research on the structure of amorphous silicon monoxide (SiO) is
reviewed. The black, coal-like modification of bulk SiO is studied by a combination of …
reviewed. The black, coal-like modification of bulk SiO is studied by a combination of …
Control of size and distribution of silicon quantum dots in silicon dielectrics for solar cell application: A review
Nano-scale engineering for optoelectronic properties of silicon has shown its suitability in
the modern era of Photovoltaic. The major focus is on Silicon quantum dots (Si QDs) which …
the modern era of Photovoltaic. The major focus is on Silicon quantum dots (Si QDs) which …
Physical and electrical properties of noncrystalline prepared by remote plasma enhanced chemical vapor deposition
RS Johnson, G Lucovsky, I Baumvol - Journal of Vacuum Science & …, 2001 - pubs.aip.org
Noncrystalline Al 2 O 3 dielectric films have been synthesized by remote plasma enhanced
chemical vapor deposition (RPECVD) and deposited on (i) H-terminated Si (100) and (ii) on …
chemical vapor deposition (RPECVD) and deposited on (i) H-terminated Si (100) and (ii) on …
Annealing and oxidation of silicon oxide films prepared by plasma-enhanced chemical vapor deposition
We have investigated phase separation, silicon nanocrystal (Si NC) formation and optical
properties of Si oxide ( Si O x, 0< x< 2) films by high-vacuum annealing and dry …
properties of Si oxide ( Si O x, 0< x< 2) films by high-vacuum annealing and dry …
Experimental and theoretical investigation of nano-crystal and nitride-trap memory devices
B De Salvo, G Ghibaudo… - … on Electron Devices, 2001 - ieeexplore.ieee.org
In this paper, we propose a thorough experimental and theoretical investigation of memory-
cell structures employing discrete-trap type storage nodes, using either natural nitride traps …
cell structures employing discrete-trap type storage nodes, using either natural nitride traps …
Phase separation of thin SiO layers in amorphous SiO/SiO2 superlattices during annealing
LX Yi, J Heitmann, R Scholz… - Journal of Physics …, 2003 - iopscience.iop.org
The preparation of ordered and arranged Si quantum dots using a SiO/SiO 2 superlattice
approach is presented. The different processes of phase separation and crystallization are …
approach is presented. The different processes of phase separation and crystallization are …
Silicon oxide (SiOx, 0< x< 2): a challenging material for optoelectronics
N Tomozeiu - Optoelectronics-Materials and Techniques, 2011 - books.google.com
A complete integration of the silicon based optoelectronic devices was not possible, for
many decades, to be made because the silicon is an inefficient emitter of light. Being a …
many decades, to be made because the silicon is an inefficient emitter of light. Being a …
Thermodynamic theory of phase separation in nonstoichiometric Si oxide films induced by high-temperature anneals
A Sarikov - Nanomanufacturing, 2023 - mdpi.com
High-temperature anneals of nonstoichiometric Si oxide (SiOx, x< 2) films induce phase
separation in them, with the formation of composite structures containing amorphous or …
separation in them, with the formation of composite structures containing amorphous or …
Chemical stability of species in thin films
A Barranco, JA Mejıas, JP Espinos… - Journal of Vacuum …, 2001 - pubs.aip.org
SiO x thin films have been prepared by evaporation of silicon monoxide powder in an
ultrahigh vacuum chamber. The films are characterized by x-ray photoelectron spectroscopy …
ultrahigh vacuum chamber. The films are characterized by x-ray photoelectron spectroscopy …