Electro-thermal characteristics of junctionless nanowire gate-all-around transistors using compact thermal conductivity model
The electrothermal performance of a junctionless nanowire [JL-nanowire (NW)] gate-all-
around (GAA) transistors under self-heating effect (SHE) is examined for sub-5 nm …
around (GAA) transistors under self-heating effect (SHE) is examined for sub-5 nm …
Tunable piezoresistive NEMS pressure sensor simulation under various environmental conditions
In this letter, the nanoelectromechanical system (NEMS)–based piezoresistive pressure
sensor is proposed on a circular diaphragm using a twin junctionless nanowire (JL-NW) …
sensor is proposed on a circular diaphragm using a twin junctionless nanowire (JL-NW) …
Self-heating mapping of the experimental device and its optimization in advance sub-5nm node junctionless multi-nanowire FETs
The junctionless multi-nanowire (JL-MNW) gate-all-around (GAA) field-effect transistor (FET)
has become an emerging device in the advanced node of modern semiconductor devices …
has become an emerging device in the advanced node of modern semiconductor devices …
The Impact of Ambient Temperature on Electrothermal Characteristics in Stacked Nanosheet Transistors with Multiple Lateral Stacks
P Zhao, L Cao, G Wang, Z Wu, H Yin - Nanomaterials, 2023 - mdpi.com
With characteristic size scaling down to the nanoscale range, the confined geometry
exacerbates the self-heating effect (SHE) in nanoscale devices. In this paper, the impact of …
exacerbates the self-heating effect (SHE) in nanoscale devices. In this paper, the impact of …
Impact of Device-to-Device Thermal Interference Due to Self-Heating on the Performance of Stacked Nanosheet FETs
M Balasubbareddy, K Sivasankaran - IEEE Access, 2024 - ieeexplore.ieee.org
The stacked nanosheet field effect transistor (SNSHFET) exhibits superior electrostatic
performance with its increased effective channel width. However, as the technology node …
performance with its increased effective channel width. However, as the technology node …
Electro-thermal properties and self-heating effect in multi-nanosheet FETs: junctionless mode versus inversion mode
Overall electro-thermal performance is optimized and analyzed in terms of lattice
temperature, thermal resistance, and delay time by varying the device active area …
temperature, thermal resistance, and delay time by varying the device active area …
Modeling of inner-outer gates and temperature dependent gate-induced drain leakage current of junctionless double-gate-all-around FET
In this paper, the temperature-dependent gate-induced drain leakage (GIDL) current model
is proposed with the help of a lateral electric field (EL) across the inner and outer gate …
is proposed with the help of a lateral electric field (EL) across the inner and outer gate …
Piezoresistive sensitivity enhancement below threshold voltage in sub-5 nm node using junctionless multi-nanosheet FETs
In this paper, the piezoresistive sensitivity is enhanced by applying uniform mechanical
stress (MS) on the multi-nanosheet (NS) channels of sub-5 nm junctionless field-effect …
stress (MS) on the multi-nanosheet (NS) channels of sub-5 nm junctionless field-effect …
Thermal Analysis of High-Performance Server SoCs from FinFET to Nanosheet Technologies
Rising power densities in large-scale server system-on-chip (SoC), with many cores,
aggravate thermal reliability issues, especially in advanced technology nodes. In this paper …
aggravate thermal reliability issues, especially in advanced technology nodes. In this paper …
Self-Heating Effect in Sub-5nm Node Junctionless Multi-Nanosheet FET
In this paper, the self-heating effect (SHE) is investigated in single nanosheet to stacked
multi-nanosheet channels using the 3D electrothermal module of the Sentaurus TCAD …
multi-nanosheet channels using the 3D electrothermal module of the Sentaurus TCAD …