Silicon based power devices have limited capabilities in terms of voltage handling and
switching speeds, leading to rampant research in the field of next generation wide bandgap …

Abstract Gallium oxide (Ga 2 O 3), a typical ultra wide bandgap semiconductor, with a
bandgap of∼ 4.9 eV, critical breakdown field of 8 MV/cm, and Baliga's figure of merit of …

The channel temperature (T ch) and thermal resistance (R th) of Ga 2 O 3 metal-oxide-
semiconductor field-effect transistors were investigated through electrical measurements …

Record DC power has been demonstrated in AlGaN/GaN high electron mobility transistors
fabricated using a substrate replacement process in which a thick diamond substrate is …

This paper presents an enhanced, closed-form expression for the thermal resistance, and
thus, the channel temperature of AlGaN/gallium nitride (GaN) HEMTs, including the effect of …

The technological development of GaN high electron mobility transistor (HEMT) is on the
right track to compete with Si and SiC-based power transistors for the market segment of> …

Thermal characterizations and modeling have been carried out on a 0.15 μm×(4× 50) μm
gate GaN-/SiC-based high-electron-mobility transistor varying the temperature from-40° C to …

Self-heating effect is a major limitation in achieving the full performance potential of high
power GaN power devices. In this work, we reported a micro-trench structure fabricated on …

A three-dimensional thermal simulation for analysis of heat dissipation of AlGaN/GaN HEMT
with diamond substrates is presented by the finite element method. The model accounts for …

An on-chip integrated temperature sensor based on a-GaN/AlGaN/GaN heterostructure is
demonstrated. The sensor consists of a two-dimensional-electron-gas (2DEG) resistor and a …