DC-Coupled Ultra Broadband Differential to Single-Ended Active Balun in 130-nm SiGe BiCMOS...

A Framework for Determining System-Level SEE Vulnerabilities in Wireless RF Receivers

JW Teng, ZR Brumbach, DG Sam… - … on Nuclear Science, 2025 - ieeexplore.ieee.org
Space-borne wireless communications systems have become ubiquitous with the advent of
commercial space flight. To support robust wireless data transmission in Earth-orbiting and …
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A DC-coupled Active Balun with 28 GHz Bandwidth and 0.3 dB-3.5° Amplitude-Phase Error in 40-nm CMOS

B Gungor, P Reynaert - 2024 IEEE European Solid-State …, 2024 - ieeexplore.ieee.org
This paper presents a DC-coupled active balun fabricated in a 40-nm CMOS technology. A
wideband phase and amplitude correction technique based on auxiliary baluns is …
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A 195–245 GHz Direct Up-Conversion Mixer with Wideband Active Balun

Y Ding, K Wang, Q Xie, Z Wang - China and International Young Scientist …, 2024 - Springer
This paper presents a sub-Terahertz modified double-balanced Gilbert mixer in 130 nm
SiGe BiCMOS process. An active transconductance balun is designed for supporting single …
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A 0.4 to 10.8 GHz,+ 20dBm OIP3 Broadband Switchable Differential to Single-Ended Active Balun in 130-nm BiCMOS Technology

L Guo, Q Li, H Wang, J Li, D Jian… - 2024 9th International …, 2024 - ieeexplore.ieee.org
In this paper, a 0.4-10.8 GHz active balun in 130nm SiGe BiCMOS technology is presented.
The balun realizes differential to single-ended (D2S) conversion using two paths, one with …
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