This paper investigates the plastic deformation in mono-crystalline silicon under complex
loading conditions. With the aid of various characterization techniques, it was found that the …

Silicon, as a single-crystal semiconductor, has brought about a great revolution in the field of
electronics and has touched almost all fields of science and technology. Though available …

Si wafers have contributed to the rapid growth of the semiconductor industry as a basic
material for ultra large scale integration (ULSI) through the research and development of …

The initiation and propagation of a crack in a silicon wafer introduces local variations in the
stress field and lattice structure through elastic energy release at crack-tip. In this study, the …

A model for the precipitation of oxygen and associated dislocation loops in Czochralski-
grown silicon is presented. Beginning with kinetic rate equations describing the growth and …

Nanoindentation was used to measure the mechanical properties of 200mm diameter (100)
CZ Si wafers subjected to the initiation and propagation of micro-crack defects. Silicon …

We report on crack propagation in 200 mm diameter Czochralski (CZ) grown silicon wafers
produced for photovoltaic (PV) applications at elevated growth rates. Enhanced thermal …

To illuminate the role of crystal growth process on final oxygen precipitates during heat
treatment of Cz-Si wafer, a coupled model, including the interaction of oxygen precipitates …

The demand for ever smaller, higher-performance integrated circuits and more efficient, cost-
effective solar cells continues to push the frontiers of process technology. Fabrication of …

The plastic deformation and microstructural changes in mono-crystalline silicon under
various conditions have been the research focus over decades, including hydrostatic …