Thin-film processing routes for combinatorial materials investigations—a review

PJ McGinn - ACS Combinatorial Science, 2019 - ACS Publications
High-throughput combinatorial investigations are transforming materials discovery, phase
diagram development, and processing optimization. Thin-film deposition techniques are …

Ultrathin ferroelectric films: growth, characterization, physics and applications

Y Wang, W Chen, B Wang, Y Zheng - Materials, 2014 - mdpi.com
Ultrathin ferroelectric films are of increasing interests these years, owing to the need of
device miniaturization and their wide spectrum of appealing properties. Recent advanced …

Control of thin ferroelectric polymer films for non-volatile memory applications

YJ Park, I Bae, SJ Kang, J Chang… - IEEE Transactions on …, 2010 - ieeexplore.ieee.org
The article presents the recent research development in controlling molecular and
microstructures of thin ferroelectric polymer films for the application of non-volatile memory …

Ordered ferroelectric PVDF− TrFE thin films by high throughput epitaxy for nonvolatile polymer memory

YJ Park, SJ Kang, B Lotz, M Brinkmann… - …, 2008 - ACS Publications
High throughput epitaxy of a thin ferroelectric poly (vinylidene fluoride-co-trifluoroethylene)(
PVDF− TrFE) film is demonstrated on a molecularly ordered poly (tetrafluoroethylene)(PTFE) …

High throughput methodology for synthesis, screening, and optimization of solid state lithium ion electrolytes

MS Beal, BE Hayden, T Le Gall, CE Lee… - ACS Combinatorial …, 2011 - ACS Publications
A study of the lithium ion conductor Li3 x La2/3–x TiO3 solid solution and the surrounding
composition space was carried out using a high throughput physical vapor deposition …

Oxygen reduction and oxygen evolution on SrTi1− xFexO3− y (STFO) perovskite electrocatalysts

BE Hayden, FK Rogers - Journal of Electroanalytical Chemistry, 2018 - Elsevier
Compositionally graduated thin films of a SrTi 1− x Fe x O 3− y (STFO) perovskite
electrocatalysts were successfully prepared by High Throughput Physical Vapour …

Atomic layer deposition of Pb (Zr, Ti) Ox on 4H-SiC for metal-ferroelectric-insulator-semiconductor diodes

F Zhang, YC Perng, JH Choi, T Wu, TK Chung… - Journal of Applied …, 2011 - pubs.aip.org
Atomic layer deposited (ALD) Pb (Zr, Ti) O x (PZT) ultra-thin films were synthesized on an
ALD Al 2 O 3 insulation layer on 4H-SiC substrate for metal-ferroelectric-insulator …

Tailoring the composition of lead zirconate titanate by atomic layer deposition

JH Choi, F Zhang, YC Perng, JP Chang - Journal of Vacuum Science & …, 2013 - pubs.aip.org
The incubation time during atomic layer deposition (ALD) of lead oxide, zirconium oxide,
and titanium oxide on each other was quantified in order to precisely control the composition …

[HTML][HTML] High throughput physical vapor deposition growth of Pb (ZrxTi1-x) O3 perovskite thin films growth on silicon substrates.

I Bakaimi, BE Hayden, CJ Mitchell, GZ Mashanovich - Thin Solid Films, 2024 - Elsevier
The integration of lead zirconate titanate (Pb (Zr x Ti 1-x) O 3)(PZT) compounds on Si
substrates with a smooth surface would provide a key technology for silicon photonic …

Fractal analysis and ferroelectric properties of Nd(ZnTi)O3(NZT)

K Khamoushi, C Serpa - Modern Physics Letters B, 2022 - World Scientific
The challenges in productivity of satellite mobile devices are growing rapidly to overcome
the question of miniaturization. The intention is to supply the electrical and microwave …