Ferroelectric and ferroelastic domain walls are 2D topological defects with thicknesses
approaching the unit cell level. When this spatial confinement is combined with observations …

At the end of a rush lasting over half a century, in which CMOS technology has been
experiencing a constant and breathtaking increase of device speed and density, Moore's …

Magnetic skyrmions are topologically protected whirling spin texture. Their nanoscale
dimensions, topologically protected stability and solitonic nature, together are promising for …

In the current information age, the realization of memory devices with energy efficient
design, high storage density, nonvolatility, fast access, and low cost is still a great challenge …

Vertically aligned nanocomposite thin films with ordered two phases, grown epitaxially on
substrates, have attracted tremendous interest in the past decade. These unique …

Heterostructures of complex transition metal oxides are known to induce extraordinary
emergent quantum states that arise from broken symmetry and other discontinuities at …

In order to bring the diverse functionalities of transition metal oxides into modern electronics,
it is imperative to integrate oxide films with controllable properties onto the silicon platform …

Polar metals are commonly defined as metals with polar structural distortions. Strict
symmetry restrictions make them an extremely rare breed as the structural constraints favor …

Controlling magnetism using voltage is highly desired for applications, but remains
challenging due to a fundamental contradiction between polarity and magnetism. Here, we …

Interfaces in complex oxides give rise to fascinating new physical phenomena arising from
the interconnected spin, lattice, charge and orbital degrees of freedom. Most commonly …