Analysis of phase separation in InGaN epitaxy for advanced solar cells
Due to providing a wide direct-band gap, the III-nitride material system has become crucial
for high-efficiency photovoltaic. But phase separation, great challenge for the growth of In x …
for high-efficiency photovoltaic. But phase separation, great challenge for the growth of In x …
Theoretical investigation of Gibb's free energy and phase diagram for InxGa1−xN nano-film system
The models for investigating the phase diagram of InGaN thin films have been anticipated by
considering the effects of strain energy, the self-energy of misfit dislocations and surface …
considering the effects of strain energy, the self-energy of misfit dislocations and surface …