Narrow band-edge photoluminescence from AgInS2 semiconductor nanoparticles by the formation of amorphous III–VI semiconductor shells

T Uematsu, K Wajima, DK Sharma, S Hirata… - NPG Asia …, 2018 - nature.com
Abstract Nanoparticles of I–III–VI semiconductors are promising candidates for novel non-
toxic fluorescent materials. However, removal of defect levels responsible for their broad …

Ecofriendly multiphase aqueous colloidal based on carboxymethylcellulose nanoconjugates with luminescence properties for potential bioimaging cancer cells

AE Paiva, FGL Medeiros Borsagli - Journal of Polymers and the …, 2020 - Springer
Quantum dots (QD) or semiconductor nanoparticles are within the most researched
nanomaterials currently. Their attractive optical, electronic and chemical properties can be …

Effect of temperature on the structure and luminescence properties of Ag0. 05Ga0. 05Ge0. 95S2-Er2S3 glasses

VV Halyan, IV Kityk, AH Kevshyn, IA Ivashchenko… - Journal of …, 2017 - Elsevier
In this article, we present the investigations of temperature dependent luminescence for the
Ag 0.05 Ga 0.05 Ge 0.95 S 2-Er 2 S 3 glass system. The possibility to use temperature …

NIR and visible luminescence features of erbium doped Ga2S3–La2S3 glasses

IV Kityk, VV Halyan, VO Yukhymchuk… - Journal of Non …, 2018 - Elsevier
An influence of the rare earth ions (La, Er) concentration on the luminescent properties of Ga
2 S 3-La 2 S 3-Er 2 S 3 glasses in the visible and near-infrared spectral region has been …

Mechanism of photoluminescence in erbium-doped chalcogenide

VV Halyan, IA Ivashchenko - Luminescence-OLED Technology …, 2020 - books.google.com
The monograph describes the technique of the synthesis of glasses and the method of the
growth of erbium-doped single crystals. The photoluminescence spectra of Ag0. 05 Ga0. 05 …

Electronic structure of (Ga55In45)2S300 and (Ga54.59In44.66Er0.75)2S300 single crystals

OY Khyzhun, VV Halyan, IV Danyliuk… - Journal of Materials …, 2016 - Springer
We report on studies of the X-ray photoelectron core-level and valence-band spectra for
pristine and Ar+-ion bombarded surfaces of (Ga 55 In 45) 2 S 300 and (Ga 54.59 In 44.66 Er …

Fabrication of In2S3 and In–Ga–S Thin Films via Atmosphere‐Controlled Fine‐Channel Mist Chemical Vapor Deposition

A Funaki, Y Araki, T Nishimura… - physica status solidi …, 2024 - Wiley Online Library
In the field of thin‐film solar cells, there is a growing need for cadmium‐free buffer layers and
fabrication techniques that are both cost‐effective and environmentally friendly. In this study …

Layered Quaternary Compounds in the Cu2S–In2S3–Ga2S3 system

MT Caldes, C Guillot-Deudon, A Thomere… - Inorganic …, 2020 - ACS Publications
Several new materials with four structure-types (eg, Cu0. 32In1. 74Ga0. 84S4 (CIGS4), Cu0.
65In1. 75Ga1. 4S5 (CIGS5), Cu1. 44In2. 77Ga0. 76S6 (CIGS6), and Cu1. 1In2. 49Ga1. 8S7 …

Laser stimulated piezo-optics of γ-irradiated (Ga55In45) 2S300 and (Ga54. 59In44. 66Er0. 75) 2S300 single crystals

IV Kityk, VO Yukhymchuk, A Fedorchuk… - Journal of Alloys and …, 2017 - Elsevier
Abstract Single crystals (Ga 55 In 45) 2 S 300 and (Ga 54.59 In 44.66 Er 0.75) 2 S 300
possessing space group P6 1 were successfully grown and explored with respect to laser …

(Ga54.59In44.66Er0.75)2S300 single crystal: novel material for detection of γ-radiation by photoinduced nonlinear optical method

IV Kityk, VV Halyan, AH Kevshyn… - Journal of Materials …, 2017 - Springer
It was shown a possibility to use the (Ga 54.59 In 44.66 Er 0.75) 2 S 300 single crystal as
optoelectronics detectors of gamma-irradiation using photoinduced nonlinear optical …