A 22nm FDSOI technology optimized for RF/mmWave applications
SN Ong, S Lehmann, WH Chow… - 2018 IEEE Radio …, 2018 - ieeexplore.ieee.org
This paper describes a 22nm FDSOI technology optimized for RF/mmWave applications.
The offering consists of high speed mmWave FET transistors, and a thick dual copper back …
The offering consists of high speed mmWave FET transistors, and a thick dual copper back …
Reconfigurable field effect transistor for advanced CMOS: Advantages and limitations
Abstract Reconfigurable FETs (RFETs) are optimized in planar Fully Depleted (FD) SOI.
Their basics, electrostatics and performance are studied and compared with standard 28 nm …
Their basics, electrostatics and performance are studied and compared with standard 28 nm …
[HTML][HTML] Performance of FDSOI double-gate dual-doped reconfigurable FETs
In this work, the electrical performance of a novel reprogrammable FDSOI device with dual-
doping at source/drain and only two top gates is investigated through advanced 3D TCAD …
doping at source/drain and only two top gates is investigated through advanced 3D TCAD …
Planar fully-depleted-silicon-on-insulator technologies: Toward the 28 nm node and beyond
This paper presents a comprehensive overview of the research done in the last decade on
planar Fully-Depleted-Silicon-On-Insulator (FDSOI) technologies in the frame of the joint …
planar Fully-Depleted-Silicon-On-Insulator (FDSOI) technologies in the frame of the joint …
A review of the mechanical stressors efficiency applied to the ultra-thin body & buried oxide fully depleted silicon on insulator technology
P Morin, S Maitrejean, F Allibert, E Augendre, Q Liu… - Solid-State …, 2016 - Elsevier
This paper reviews the different stressor techniques used in microelectronics, in the scope of
the Ultra-Thin Body & Buried Oxide Fully-Depleted Silicon On Insulator technology (UTBB …
the Ultra-Thin Body & Buried Oxide Fully-Depleted Silicon On Insulator technology (UTBB …
Dual PN source/drain reconfigurable FET for fast and low-voltage reprogrammable logic
Schottky junction reconfigurable FETs suffer from limited output currents to drive the
following stages, jeopardizing their viability for high-end applications. This drawback …
following stages, jeopardizing their viability for high-end applications. This drawback …
Reconfigurable field effect transistor for advanced CMOS: A comparison with FDSOI devices
Reconfigurable field effect transistor for advanced CMOS: A comparison with FDSOI
devices Page 1 EUROSOI-ULIS 2016 Reconfigurable field effect transistor for advanced …
devices Page 1 EUROSOI-ULIS 2016 Reconfigurable field effect transistor for advanced …
22FDX® fMAX Optimization through Parasitics Reduction and GM Boost
Z Zhao, S Lehmann, L Lucci, Y Andee… - … 2019-49th European …, 2019 - ieeexplore.ieee.org
This paper proposes three methods of reducing device gate resistance and parasitic
capacitance while boosting transconductance of MOSFET on 22FDX®. The f MAX can be …
capacitance while boosting transconductance of MOSFET on 22FDX®. The f MAX can be …
Strain effect on mobility in nanowire MOSFETs down to 10 nm width: Geometrical effects and piezoresistive model
J Pelloux-Prayer, M Casse, F Triozon, S Barraud… - Solid-State …, 2016 - Elsevier
The effect of strain on carrier mobility in triple gate Fully Depleted Silicon On Insulator
(FDSOI) nanowires (NWs) is experimentally investigated through piezoresistance …
(FDSOI) nanowires (NWs) is experimentally investigated through piezoresistance …
Advanced FD-SOI Engineered Substrates for Automotive Radar Applications
K Pradeep, P Flatresse, R Lutz - 2024 IEEE International …, 2024 - ieeexplore.ieee.org
The semiconductor revolution in automobiles is currently driven by drive train electrification
and autonomous driving (ADAS). Powered by engineered substrates, FD-SOI, with its …
and autonomous driving (ADAS). Powered by engineered substrates, FD-SOI, with its …