Mechanical aspects of the chemical mechanical polishing process: A review

H Lee, D Lee, H Jeong - International journal of precision engineering and …, 2016 - Springer
Chemical mechanical polishing (CMP) is an essential semiconductor manufacturing process
because of its local and global planarization ability in fabricating highly integrated devices …

From design for manufacturing (DFM) to manufacturing for design (MFD) via hybrid manufacturing and smart factory: A review and perspective of paradigm shift

WS Chu, MS Kim, KH Jang, JH Song… - International Journal of …, 2016 - Springer
Manufacturing paradigms have historically been shaped by social, economic, and
technological aspect, including limitations and needs. Design for manufacturing (DFM) has …

Effect of the carboxyl group number of the complexing agent on polishing performance of alumina slurry in sapphire CMP

W Zhang, H Lei, W Liu, Z Zhang - Ceramics International, 2023 - Elsevier
Alumina abrasive has a high polishing rate in the polishing process, but there are issues that
need to be addressed with poor dispersion and poor post-polishing surface quality. This …

Evaluation of double sided lapping using a fixed abrasive pad for sapphire substrates

HM Kim, R Manivannan, DJ Moon, H Xiong, JG Park - Wear, 2013 - Elsevier
In this study, the double sided lapping behavior of sapphire substrate using fixed diamond
abrasive pad was evaluated. For the lapping process, fixed diamond abrasive pad is used …

Chemical-mechanical polishing performance of core-shell structured polystyrene@ ceria/nanodiamond ternary abrasives on sapphire wafer

C Zhou, X Xu, L Dai, H Gong, S Lin - Ceramics International, 2021 - Elsevier
Driven by electrostatic attraction, Ce 4+ ions or/and positively charged detonation
nanodiamond (DND) particles can absorb onto negatively charged polystyrene (PS) …

Study on the processing characteristics of SiC and sapphire substrates polished by semi-fixed and fixed abrasive tools

Q Luo, J Lu, X Xu - Tribology International, 2016 - Elsevier
The semi-fixed and fixed polishing film with diamond and alumina abrasive are used for a
contrastive experiment involving polishing SiC and sapphire substrates in this study. The …

Characterization of sapphire chemical mechanical polishing performances using silica with different sizes and their removal mechanisms

Y Zhou, G Pan, H Gong, X Shi, C Zou - Colloids and Surfaces A …, 2017 - Elsevier
Sapphire chemical mechanical polishing (CMP) performances using silica particles with
different sizes have been studied. We find that MRR by 10 nm silica slurry could appear …

Study on the influence of sapphire crystal orientation on its chemical mechanical polishing

L Cao, X Zhang, J Yuan, L Guo, T Hong, W Hang… - Applied Sciences, 2020 - mdpi.com
Sapphire has been the most widely used substrate material in LEDs, and the demand for
non-C-planes crystal is increasing. In this paper, four crystal planes of the A-, C-, M-and R …

Comparison between sapphire lapping processes using 2-body and 3-body modes as a function of diamond abrasive size

HM Kim, GH Park, YG Seo, DJ Moon, BJ Cho, JG Park - Wear, 2015 - Elsevier
Lapping for sapphire substrates was evaluated with respect to material removal modes.
Firstly, a 3-body removal mode that consists of diamond slurry and a metal–resin platen was …

CMP behavior of alumina/metatitanic acid core–shell abrasives on sapphire substrates

X Wang, H Lei, R Chen - Precision Engineering, 2017 - Elsevier
The abrasive is one of the important influencing factors during the chemical mechanical
polishing (CMP) process. Although α-alumina is one of the most commonly used sapphire …