Focussing on micro-and nanoelectronics design and technology, this book provides
thorough analysis and demonstration, starting from semiconductor devices to VLSI …

Tunnel field effect transistors (TFETs) have emerged as one of the most promising post‐
CMOS technologies for digital, analogue and RF designs. However, it has been …

With CMOS technology scaling and increased short channel effects, spin-transfer torque-
magnetic tunnel junction (STT-MTJ)/CMOS-based logic-in-memory (LIM) designs consume …

Tunnel FETs (TFETs) as steep slope devices have attracted much attention for designing
energy efficient digital systems at scaled supply voltages. In this paper, we propose a …

Tunnel field‐effect transistor (TFET) exhibits significant p‐i‐n forward leakage with the
increase in drain‐to‐source voltage bias, and this adversely impacts the power consumption …

This paper explores the design and analysis of 20 nm tunnel transistor-based Exclusive-OR
(Ex-OR) gates and half-adder cells with circuit interaction (co-design) approach for energy …

Tunnel field-effect transistors (TFETs) as low voltage device options have attracted recent
attention for energy efficient circuit designs with CMOS technology scaling. This paper …

Tunnel FETs have attracted much attention recently for energy efficient designs. This paper
presents design, analysis and benchmarking of Tunnel FET (TFET) based reliable XOR …

This paper deals with the implementation of low voltage, energy efficient and high speed 1-
bit Full Adder (FA) cell in pass transistor (PT) logic by using 20 nm compact model …

We propose a novel region-based method to recognize human actions by analyzing regions
surrounding the human body, termed as negative space according to art theory, whereas …