The paper investigated the electrical properties of graphene/p-CdTe structures, which were
distinguished by different durations of graphene films application on p-CdTe crystalline …

The conditions for obtaining diode heterostructures of MnS/n-CdZnTe by the method of
spray pyrolysis of MnS alabandite thin films on n-CdZnTe crystalline substrates were …

Abstract n-CoFe 2 O 4/n-CdTe heterojunctions with a current rectification ratio of 3· 10 5 at
voltages| V|= 1.5 V were made by spray pyrolysis of aqueous solutions of cobalt and iron …

Conditions for the fabrication of isotype photodiode n-Mn 2 O 3 n-CdZnTe heterostructures
by the spray pyrolysis of thin α-Mn 2 O 3 bixbite films on n-CdZnTe crystalline substrates …

The conditions for the formation of the energy barrier in isotypic n-TiN/n-Si heterojunctions
by the reactive magnetron sputtering method of thin films of titanium nitride on n-Si …

The conditions for the production of isotype FTO/n-CdTe heterojunctions by spray pyrolysis
of SnO 2: F (FTO) thin films on n-CdTe crystalline substrates have been studied. The …

Spray pyrolysis of aqueous solutions of CuCl 2· 2H 2 O and MnCl 2· 4H 2 O salts at
Ts=350^∘C was used to obtain p-type CuMnO 2 films with resistivity ρ=1.8\mathbfkΩ.cm and …

Graphene/p-CdTe Schottky diodes are obtained on p-CdTe substrates by spaying aqueous
solutions of polyvinylpyrrolidone (PVP,(C6H9NO) n), which contain particles of multilayer …

Дослiджено умови виготовлення фотодiодних iзотипних гетероструктур 𝑛-Mn2O3/𝑛-
CdZnTe методом спрей-пiролiзу тонких плiвок бiксбiту 𝛼-Mn2O3 на кристалiчнi …

The IV and CV–characteristics of the isotype Zn1-x Cox O/n-GaP heterojunction fabricated
by spray pyrolysis of Zn 1-x Co x O thin films on n-GaP crystalline substrates have been …