Heat conduction of multilayer nanostructures with consideration of coherent and incoherent phonon transport

B Liu, Y Guo, VI Khvesyuk, AA Barinov, M Wang - Nano Research, 2022 - Springer
We report a theoretical investigation of coherent-to-incoherent heat conduction in multilayer
nanostructures. In the coherent regime where the phonon motion is quasi-harmonic, the …

From GaN crystallinity to device performance: Nucleation mode vs Surface energy of single-crystalline AlN template

Z Liang, Y Yuan, W Feng, X Li, Z Liu, Y Liang… - Journal of Alloys and …, 2024 - Elsevier
In this paper, the surface state of the single-crystalline AlN template's impact on the epitaxial
growth of gallium nitride (GaN) was studied. Subsequently, Schottky barrier devices were …

Comparative studies of nanoscale columnar AlxGa1-xN/AlN heterostructures grown by plasma-assisted molecular-beam epitaxy on cSi, porSi/cSi and SiC/porSi/cSi …

PV Seredin, DL Goloshchapov, NA Kurilo, AO Radam… - Optical Materials, 2023 - Elsevier
Problems of the growth of nanoscale columnar Al x Ga 1-x N/AlN heterostructures on hybrid
substrates involving porous silicon and silicon carbide layers by molecular beam epitaxy …

Organized AlN Nanowire Arrays by Hybrid Approach of Top-Down Processing and MOVPE Overgrowth for Deep UV Emission Devices

L Valera, L Jaloustre, V Reita… - ACS Applied Nano …, 2024 - ACS Publications
The fabrication of organized AlN nanowires with well faceted m-sidewalls is demonstrated,
exhibiting a narrow near-band-edge emission that confirms the high quality of the AlN …

Growth of β-Ga2O3 nanostructures by thermal oxidation of GaN-on-sapphire for optoelectronic devices applications

R Dhaka, A Yadav, G Gupta, S Dutta… - Journal of Alloys and …, 2024 - Elsevier
Heterostructures of wide-bandgap semiconductors, like β-Ga 2 O 3/GaN, are being used in
many high-power, high-frequency electronic and optoelectronic devices. This paper …

Electron Accumulation Tuning by Surface-to-Volume Scaling of Nanostructured InN Grown on GaN (001) for Narrow-Bandgap Optoelectronics

FM de Oliveira, AV Kuchuk, PM Lytvyn… - ACS Applied Nano …, 2023 - ACS Publications
The existence of an uncontrolled electron accumulation layer near the surface of InN thin
films is an obstacle for the development of reliable InN-based devices for use in narrow …

Spatially correlated stress-photoluminescence evolution in GaN/AlN multi-quantum wells

FM de Oliveira, AV Kuchuk, PK Ghosh, ME Ware… - Surfaces and …, 2024 - Elsevier
In the manufacture of semiconductor devices, cracking of heterostructures has been
recognized as a major obstacle for their post-growth processing. In this work, we explore …

[HTML][HTML] Silicon nitride shadowed selective area growth of low defect density vertical GaN mesas via plasma-assisted molecular beam epitaxy

MM Landi, FP Kelly, RE Vesto, K Kim - APL Materials, 2024 - pubs.aip.org
Ion bombardment during inductively coupled plasma reactive-ion etching and ion-
implantation introduces irreparable crystalline damage to gallium nitride (GaN) power …

Temperature dependent correlation of Hall effect and optical measurements of electron concentration in degenerate InN thin film

FM de Oliveira, C Li, PK Ghosh, AV Kuchuk… - Journal of Vacuum …, 2023 - pubs.aip.org
In this work, we study the thermal evolution of the optical and electrical features of an InN
thin film. By correlating photoluminescence (PL) and Hall effect results, we determine the …

Alternative Route of Fracturing in GaN Films Formed by Nanowires Coalescence on Si Substrate

S Kryvyi, H Stanchu, O Liubchenko… - Crystal Growth & …, 2022 - ACS Publications
Self-assembled GaN nanowires (NWs) were used as buffer structures to grow GaN layers on
Si (111). The coalescence of GaN NWs into a planar layer was studied by measuring the …