2-D strain FET (2D-SFET) based SRAMs—Part I: Device-circuit interactions
In this article, we analyze the characteristicsof a recently conceived steep switching device 2-
D Strain FET (2D-SFET) and present its circuit implications in the context of 6T-SRAM. We …
D Strain FET (2D-SFET) and present its circuit implications in the context of 6T-SRAM. We …
2D strain FET (2D-SFET)-based SRAMs—Part II: Back voltage-enabled designs
In Part I of this article, we had discussed the device characteristics of 2D Strain FET (2D-
SFET) and 6T-SRAM with 2D-SFET used as a drop-in replacement for 2D-FET. Here (in Part …
SFET) and 6T-SRAM with 2D-SFET used as a drop-in replacement for 2D-FET. Here (in Part …
Evaluation of Tradeoffs in the Design of FPGA Fabrics Using Electrostrictive 2-D FETs
S Baskaran, J Sampson - … on Very Large Scale Integration (VLSI …, 2021 - ieeexplore.ieee.org
The electrostrictive 2-D field-effect transistor (EFET) is a steep-slope device that promises to
offer aggressive length and voltage scalability. Two key features of this device are its high …
offer aggressive length and voltage scalability. Two key features of this device are its high …
2D electrostrictive FET based circuits: Compact modeling and device-circuit co-design
N Thakuria - 2018 - etda.libraries.psu.edu
2D Electrostrictive FET (EFET) is an emerging steep switching device with immense
potential to replace conventional MOSFETs. EFET has 4-terminals: gate (G), source (S) …
potential to replace conventional MOSFETs. EFET has 4-terminals: gate (G), source (S) …