Low‐dimensional nanomaterial/Si heterostructure‐based photodetectors

W Tian, H Sun, L Chen, P Wangyang, X Chen… - InfoMat, 2019 - Wiley Online Library
Due to its excellent electrical and optical features, silicon (Si) is highly attractive for
photodetector applications. The design and fabrication of low‐dimensional semiconductor/Si …

[HTML][HTML] Advances in soft materials for sustainable electronics

MJ Han, DK Yoon - Engineering, 2021 - Elsevier
In the current shift from conventional fossil-fuel-based materials to renewable energy,
ecofriendly materials have attracted extensive research interest due to their sustainability …

High performance near-infrared photodetectors based on ultrathin SnS nanobelts grown via physical vapor deposition

X Zhou, L Gan, Q Zhang, X Xiong, H Li… - Journal of Materials …, 2016 - pubs.rsc.org
Ultrathin SnS nanobelts were synthesized via physical vapor deposition (PVD). Furthermore,
high performance near-infrared (NIR) photodetectors based on SnS nanobelts showed an …

Au nanoparticle-decorated silicon pyramids for plasmon-enhanced hot electron near-infrared photodetection

Z Qi, Y Zhai, L Wen, Q Wang, Q Chen, S Iqbal… - …, 2017 - iopscience.iop.org
The heterojunction between metal and silicon (Si) is an attractive route to extend the
response of Si-based photodiodes into the near-infrared (NIR) region, so-called Schottky …

The versatility of copper tin sulfide

AC Lokhande, PT Babar, VC Karade… - Journal of Materials …, 2019 - pubs.rsc.org
In recent years, copper tin sulfide (CTS) chalcogenide compounds have witnessed
applicability in various fields, rendering them as a formidable candidate for various …

Emerging “green” materials and technologies for electronics

M Baumgartner, ME Coppola… - Green Materials for …, 2017 - books.google.com
We are currently witnessing an evolution of technologies blurring the lines between the
physical, digital, and biological spheres. Electronics become highly flexible and even …

Rapid anisotropic chemical etching for quick formation of novel octagonal pyramids on silicon surface for photovoltaics

S Iqbal, A Hussain, W Wu, D Su, Y Yang, X Guo… - Surfaces and …, 2022 - Elsevier
A novel octagonal micro pyramid structure was formed by etching a monocrystalline silicon
wafer (100) by employing a wet chemical anisotropic etching process. The main objective is …

Large bandgap reduced graphene oxide (rGO) based n-p+ heterojunction photodetector with improved NIR performance

M Singh, G Kumar, N Prakash… - Semiconductor …, 2018 - iopscience.iop.org
Integration of two-dimensional reduced graphene oxide (rGO) with conventional Si
semiconductor offers novel strategies for realizing broadband photodiode with enhanced …

A comprehensive investigation of organic active layer structures toward high performance near-infrared phototransistors

Y Liang, W Lv, X Luo, L He, K Xu, F Zhao, F Huang… - Synthetic Metals, 2018 - Elsevier
Tin phthalocyanine (SnPc) is a kind of organic semiconductor material with excellent
absorbing characteristic in near-infrared (NIR) region but rarely applied in photosensitive …

Solution-processed near-infrared phototransistor based on ultrathin nanocrystals of octamethyl substituted zinc (II) phthalocyanine

H Shan, Y Wang, C Li, Q Hu, X Sun, L Dong, Y Feng… - Organic …, 2018 - Elsevier
A drop-casted near-infrared (NIR) organic phototransistor (OPT) based on ultrathin
nanocrystals of octamethyl substituted zinc (II) phthalocyanine (ZnMe 2 Pc) has been …