Recent advances in light sources on silicon
Realizing efficient on-chip light sources has long been the “holy-grail” for Si-photonics
research. Several important breakthroughs were made in this field in the past few years. In …
research. Several important breakthroughs were made in this field in the past few years. In …
III–V semiconductor whispering-gallery mode micro-cavity lasers: Advances and prospects
III-V semiconductor lasers are ubiquitous in modern optoelectronic devices, with
applications ranging from telecommunication to general lighting. Among the different kinds …
applications ranging from telecommunication to general lighting. Among the different kinds …
Bottom-up, chip-scale engineering of low threshold, multi-quantum-well microring lasers
Integrated, on-chip lasers are vital building blocks in future optoelectronic and nanophotonic
circuitry. Specifically, III–V materials that are of technological relevance have attracted …
circuitry. Specifically, III–V materials that are of technological relevance have attracted …
High-quality GaSb epitaxially grown on Si (001) through defects self-annihilation for CMOS-compatible near-IR light emitters
T Tang, W Zhan, C Shen, M Li, B Xu, Z Wang… - Optical Materials …, 2022 - opg.optica.org
Direct epitaxial growth of III-V materials on complementary metal-oxide-semiconductor
(CMOS)-compatible Si substrates has long been a scientific and engineering problem for …
(CMOS)-compatible Si substrates has long been a scientific and engineering problem for …
980 nm electrically pumped continuous lasing of QW lasers grown on silicon
Investigation of high-performance lasers monolithically grown on silicon (Si) could promote
the development of silicon photonics in regimes other than the 1.3-1.5 µm band. 980 nm …
the development of silicon photonics in regimes other than the 1.3-1.5 µm band. 980 nm …
III–V infrared emitters on Si: fabrication concepts, device architectures and down-scaling with a focus on template-assisted selective epitaxy
The local integration of III–Vs on Si is relevant for a wide range of applications in electronics
and photonics, since it combines a mature and established materials platform with desired …
and photonics, since it combines a mature and established materials platform with desired …
Er3+-doped fluorotellurite glass microsphere lasers with ultra-low threshold
Er 3+-doped tellurite glass microlasers have great potential in generating lasers in the
communication band. However, the lasing threshold is generally high due to the influence of …
communication band. However, the lasing threshold is generally high due to the influence of …
GaAs on (001) Si templates for near-infrared InP quantum dot lasers
We investigated the effects of thermal cycle annealing (TCA) at high temperatures on the
defect density and morphology of GaAs epilayers grown on (001) Si substrates. Several …
defect density and morphology of GaAs epilayers grown on (001) Si substrates. Several …
High optical gain in InP-based quantum-dot material monolithically grown on silicon emitting at telecom wavelengths
R Balasubramanian, V Sichkovskyi… - Semiconductor …, 2022 - iopscience.iop.org
We describe the fabrication process and properties of an InP based quantum dot (QD) laser
structure grown on a 5 off-cut silicon substrate. Several layers of QD-based dislocation filters …
structure grown on a 5 off-cut silicon substrate. Several layers of QD-based dislocation filters …
Low-loss Er3+-doped silicate glass microsphere laser for temperature sensing
Y Yao, Q Zhang, Y Xie, Y Yang, Z Cao… - Advanced Sensor …, 2023 - spiedigitallibrary.org
We present a low-loss Er 3+-doped silicate microsphere laser, exploring its temperature
sensing characteristics. We measure the threshold power of the Er 3+-doped silicate glass …
sensing characteristics. We measure the threshold power of the Er 3+-doped silicate glass …