A review on the development and advancement of Ta2O5 as a promising photocatalyst

V Gurylev - Materials Today Sustainability, 2022 - Elsevier
Ta 2 O 5 is an important material that has recently been discovered to serve as an attractive
alternative to TiO 2 during photocatalytic and photoelectrochemical processing, given that …

Tantalum pentoxide: from crystal structures to applications in water splitting

C Han, T Wang - Energy & Fuels, 2023 - ACS Publications
The environment and energy crisis due to carbon dioxide emissions from burning fossil fuels
have increased the urgency to explore sustainable energy, while hydrogen with high energy …

Structural and electronic properties of Ta2O5 with one formula unit

Y Tong, H Tang, Y Yang - Computational Materials Science, 2023 - Elsevier
Based on particle swarm optimization (PSO) algorithm and density functional theory (DFT)
calculations, we identify a stable triclinic crystal structure of Ta 2 O 5 (named as γ 1-Ta 2 O 5) …

Formation and characterization of gray Ta2O5 and its enhanced photocatalytic hydrogen generation activity

WS Liu, MW Liao, SH Huang, YIA Reyes… - International Journal of …, 2020 - Elsevier
White and gray Ta 2 O 5 powders were fabricated by sol-gel and then annealed at 850° C in
air and vacuum, respectively. Analyses by Raman spectroscopy, X-ray photoelectron …

Modified dynamic physical model of valence change mechanism memristors

J Park, J Choi, G Kim, G Kim, GS Kim… - … Applied Materials & …, 2022 - ACS Publications
Valence change-type resistance switching behaviors in oxides can be understood by well-
established physical models describing the field-driven oxygen vacancy distribution change …

Prediction of new ground-state crystal structure of

Y Yang, Y Kawazoe - Physical Review Materials, 2018 - APS
Tantalum pentoxide (T a 2 O 5) is a wide-gap semiconductor which has important
technological applications. Despite the enormous efforts from both experimental and …

Synergistic Resistive Switching Mechanism of Oxygen Vacancies and Metal Interstitials in Ta2O5

L Zhu, J Zhou, Z Guo, Z Sun - The Journal of Physical Chemistry C, 2016 - ACS Publications
Ta2O5 is extensively studied as a data-storage material for resistance random access
memory (RRAM). The resistive switching (RS) in Ta2O5-based RRAM is generally believed …

Oxygen vacancy effects on an amorphous-TaO x-based resistance switch: a first principles study

B Xiao, S Watanabe - Nanoscale, 2014 - pubs.rsc.org
Amorphous TaOx (a-TaOx) based resistance switches have recently demonstrated
outstanding performance and are being considered as one of the most promising …

Oxygen vacancy defects in Ta2O5 showing long-range atomic re-arrangements

Y Guo, J Robertson - Applied Physics Letters, 2014 - pubs.aip.org
The structure, formation energy, and energy levels of the various oxygen vacancies in Ta 2
O 5 have been calculated using the λ phase model. The intra-layer vacancies give rise to …

A search for the ground state structure and the phase stability of tantalum pentoxide

S Pérez-Walton, C Valencia-Balvín… - Journal of Physics …, 2015 - iopscience.iop.org
Abstract Tantalum pentoxide (Ta 2 O 5) is a wide-gap semiconductor that presents good
catalytic and dielectric properties, conferring to this compound promising prospective use in …