Owing to their novel physical properties, semiconductors have penetrated almost every
corner of the contemporary industrial system. Nowadays, semiconductor materials and their …

Abstract Gallium oxide (Ga 2 O 3), an emerging ultra-wide-bandgap semiconductor, has the
desirable properties of a large bandgap of 4.6–4.9 eV, an estimated critical breakdown field …

Gallium oxide (Ga2O3) is emerging as a viable candidate for certain classes of power
electronics with capabilities beyond existing technologies due to its large bandgap …

Ga 2 O 3 is an ultrawide bandgap semiconductor with a bandgap energy of 4.5–5.3 eV
(depending on its crystal structure), which is much greater than those of conventional wide …

Ultrawide bandgap β-gallium oxide (β-Ga2O3) is emerging as a viable candidate for next-
generation high-power electronics, including Schottky barrier diodes (SBDs) and field-effect …

This letter reports the polymer passivation of field plated lateral β-Ga 2 O 3 MOSFETs with
significant improvement in the breakdown voltages as compared to non-passivated devices …

Owing to the advantages of ultra-wide bandgap and rich material systems, gallium oxide (Ga
2 O 3) has emerged as a highly viable semiconductor material for new researches. This …

With projected performance advantages over silicon and incumbent wide-bandgap
compound semiconductors, gallium oxide (Ga 2 O 3) has garnered worldwide attention as …

In this letter, we report on demonstrating high-performance field-plated lateral-Ga 2 O 3
Schottky barrier diode (SBD) on a sapphire substrate with a reverse blocking voltage of …

Abstract β-Ga 2 O 3 metal–semiconductor field-effect transistors are realized with superior
reverse breakdown voltages (V BR) and ON currents (I DMAX). A sandwiched SiN x …