We present a novel resistance-compensated I–V method to extract the series resistance,
ideality factor, barrier height and built-in potential of a metal–semiconductor diode. We show …

Photovoltaic (PV) systems require bypass diodes to protect PV modules from operating at
negative voltages, thus avoiding the degradation of a PV array under partial-shading …

In this reported work the interface properties of a process-induced thin interfacial oxide layer
present between Ni and 4H–SiC substrate was examined systematically for fabricated Ni/4H …

In this paper, Schottky diodes, consisting of an n-doped 4H–silicon carbide substrate, and
molybdenum and molybdenum nitride thin-film metallization, are presented. By the variation …

A low value of Schottky barrier height (SBH)(is highly desired to further reduce the power
loss in 4H-SiC junction barrier Schottky (JBS) diodes; however, the reduced results in …

This article presents dopant-induced photoresponsivity in Coumarin (CO)-dye-sensitized
nanowire NiO/p-Si. The photoresponse modulation of Al/CO doped NiO/p-Si/Al …

The temperature behavior remains one of the most important fundamental properties of any
given system that is linked inextricably to the other parameters of the system. However …

A compact model applicable for both Schottky barrier diode (SBD) and junction barrier
Schottky diode (JBS) structures is developed. The SBD model considers the current due to …

This study investigates the electrical and charge transport properties of Schottky diodes with
a p-Si/TiO2/SAM/Al structure, incorporating the self-assembly monolayers (SAMs) 4", 4"" …

We report on the development of a new generation of SiC Schottky rectifier devices
employing a Molybdenum based barrier metal system and a new stripe cell design for field …