Chapter One Spin-Dependent Tunneling in Magnetic Junctions

HJM Swagten - Handbook of Magnetic Materials, 2007 - Elsevier
This chapter reviews the physics of spin-dependent tunneling in magnetic tunnel junctions,
ie ferromagnetic layers separated by an ultrathin, insulating barrier. In magnetic junctions …

Aluminum oxide layers as possible components for layered tunnel barriers

E Cimpoiasu, SK Tolpygo, X Liu, N Simonian… - Journal of Applied …, 2004 - pubs.aip.org
We have studied transport properties of Nb/Al/AlO x/Nb tunnel junctions with ultrathin
aluminum oxide layers formed by (i) thermal oxidation and (ii) plasma oxidation, before and …

Phase diagram calculations in teaching, research, and industry

YA Chang - Metallurgical and Materials Transactions A, 2006 - Springer
I have a long-standing interest in alloy thermodynamics/phase diagrams and in utilizing the
principles of this subject for materials research and engineering applications. At the same …

Effects of composition on atomic structure, diffusivity, and viscosity of liquid Al-Zr alloys

WY Wang, SL Shang, HZ Fang, H Zhang… - … Materials Transactions A, 2012 - Springer
The diffusion coefficients and viscosity of four Al 1–x Zr x (x= 0.4, 0.5. 0.6, and 0.67) alloys
are predicted by ab initio molecular dynamic simulations via the Einstein and Darken …

Atomic structure, electronic structure and thermal stability of amorphous AlxZr1− x (0.26≤ x≤ 0.75)

K Weller, N Zotov, ZM Wang, LPH Jeurgens… - Journal of Non …, 2015 - Elsevier
A comprehensive study of the atomic structure, electronic structure and thermal stability of
sputter-deposited amorphous Al x Zr 1− x (x= 0.26, 0.35, 0.51, 0.75) has been carried out …

Thermal stability of magnetic tunnel junctions with new amorphous ZrAl-alloy films as the under and capping layers

CM Choi, JO Song, SR Lee - IEEE transactions on magnetics, 2005 - ieeexplore.ieee.org
We studied the thermal stability of new amorphous ZrAl-based magnetic tunnel junctions
(MTJs) with a ZrAl-oxide barrier replacing the Ta layers traditionally used for the under and …

The formation of amorphous alloy oxides as barriers used in magnetic tunnel junctions

JJ Yang, Y Yang, K Wu, YA Chang - Journal of applied physics, 2005 - pubs.aip.org
The quality of a tunnel barrier is of critical importance for the success of a magnetic tunnel
junction. An amorphous state of the precursor metal films is beneficial for the formation of an …

Characterization of NbN Tunnel Junctions With Radical-Nitrided Barriers

H Akaike, T Funai, N Naito… - IEEE transactions on …, 2013 - ieeexplore.ieee.org
This paper reports on the electrical characteristics of NbN tunnel junctions fabricated by
radical nitridation of an Al layer deposited on a base NbN layer to form the barrier. The …

[PDF][PDF] 4 英寸热氧化硅衬底上磁性隧道结的微制备

王天兴, 魏红祥, 李飞飞, 张爱国, 曾中明, 詹文山… - 2004 - wulixb.iphy.ac.cn
就如何在4 英寸热氧化硅衬底上沉积高质量的磁性隧道结纳米多层薄膜材料和如何利用光刻
方法微加工制备均匀性较好的磁性隧道结方面做了初步研究, 并对磁性隧道结的磁电性质及其 …

Growth and physical property of epitaxial Co70Fe30 thin film on Si substrate via TiN buffer

CX Ji, F Lu, YA Chang, JJ Yang… - Applied Physics …, 2008 - pubs.aip.org
Epitaxial Co 70 Fe 30 films with the bcc structure were grown on a Si (001) substrate with
TiN as a buffer by sputtering technique. The x-ray diffraction results confirmed the epitaxial …