III-nitride nanostructures: Emerging applications for Micro-LEDs, ultraviolet photonics, quantum optoelectronics, and artificial photosynthesis
In this review article, we discuss the molecular beam epitaxy and basic structural, electronic,
optical, excitonic, chemical and catalytic properties of III-nitride nanostructures, including …
optical, excitonic, chemical and catalytic properties of III-nitride nanostructures, including …
Structure, energetics, and electronic states of III–V compound polytypes
F Bechstedt, A Belabbes - Journal of Physics: Condensed Matter, 2013 - iopscience.iop.org
Recently several hexagonal polytypes such as 2H, 4H, and 6H have been discovered for
conventional III–V semiconductor compounds in addition to the cubic 3C zinc-blende …
conventional III–V semiconductor compounds in addition to the cubic 3C zinc-blende …
When group-III nitrides go infrared: New properties and perspectives
J Wu - Journal of applied physics, 2009 - pubs.aip.org
Wide-band-gap GaN and Ga-rich InGaN alloys, with energy gaps covering the blue and
near-ultraviolet parts of the electromagnetic spectrum, are one group of the dominant …
near-ultraviolet parts of the electromagnetic spectrum, are one group of the dominant …
Surface Electron Accumulation and the Charge Neutrality Level in
High-resolution x-ray photoemission spectroscopy, infrared reflectivity and Hall effect
measurements, combined with surface space-charge calculations, are used to show that …
measurements, combined with surface space-charge calculations, are used to show that …
Sources of conductivity and doping limits in CdO from hybrid density functional theory
M Burbano, DO Scanlon… - Journal of the American …, 2011 - ACS Publications
CdO has been studied for decades as a prototypical wide band gap transparent conducting
oxide with excellent n-type ability. Despite this, uncertainty remains over the source of …
oxide with excellent n-type ability. Despite this, uncertainty remains over the source of …
Electronic bands of III-V semiconductor polytypes and their alignment
The quasiparticle band structures of four polytypes 3C, 6H, 4H, and 2H of GaP, GaAs, GaSb,
InP, InAs, and InSb are computed with high accuracy including spin-orbit interaction …
InP, InAs, and InSb are computed with high accuracy including spin-orbit interaction …
Branch-point energies and band discontinuities of III-nitrides and III-/II-oxides from quasiparticle band-structure calculations
Using quasiparticle band structures based on modern electronic-structure theory, we
calculate the branch-point energies for zinc blende (GaN, InN), rocksalt (MgO, CdO), wurtzite …
calculate the branch-point energies for zinc blende (GaN, InN), rocksalt (MgO, CdO), wurtzite …
InN/GaN valence band offset: High-resolution x-ray photoemission spectroscopy measurements
High-resolution x-ray photoemission spectroscopy measurements are used to determine the
valence band offset of wurtzite-InN/GaN (0001) heterojunctions to be 0.58±0.08 eV. This is …
valence band offset of wurtzite-InN/GaN (0001) heterojunctions to be 0.58±0.08 eV. This is …
Tuning the surface charge properties of epitaxial InN nanowires
S Zhao, S Fathololoumi, KH Bevan, DP Liu… - Nano …, 2012 - ACS Publications
We have investigated the correlated surface electronic and optical properties of [0001]-
oriented epitaxial InN nanowires grown directly on silicon. By dramatically improving the …
oriented epitaxial InN nanowires grown directly on silicon. By dramatically improving the …
Thermoelectric properties of InxGa1− xN alloys
Thermoelectric (TE) properties of In x Ga 1− x N alloys grown by metal organic chemical
vapor deposition have been investigated. It was found that as indium concentration …
vapor deposition have been investigated. It was found that as indium concentration …