Next generation electronics on the ultrawide-bandgap aluminum nitride platform
Gallium nitride high-electron-mobility transistors (GaN HEMTs) are at a point of rapid growth
in defense (radar, SATCOM) and commercial (5G and beyond) industries. This growth also …
in defense (radar, SATCOM) and commercial (5G and beyond) industries. This growth also …
[HTML][HTML] Toward AlGaN channel HEMTs on AlN: Polarization-induced 2DEGs in AlN/AlGaN/AlN heterostructures
Due to its high breakdown electric field, the ultra-wide bandgap semiconductor AlGaN has
garnered much attention recently as a promising channel material for next-generation high …
garnered much attention recently as a promising channel material for next-generation high …
[HTML][HTML] Surface control and MBE growth diagram for homoepitaxy on single-crystal AlN substrates
The evolution of surface morphology for single-crystal bulk Al-polar aluminum nitride
substrates during ex situ cleaning, in situ cleaning, and subsequent homoepitaxy is …
substrates during ex situ cleaning, in situ cleaning, and subsequent homoepitaxy is …
Molecular beam homoepitaxy of N-polar AlN: Enabling role of aluminum-assisted surface cleaning
N-polar aluminum nitride (AlN) is an important building block for next-generation high-power
radio frequency electronics. We report successful homoepitaxial growth of N-polar AlN by …
radio frequency electronics. We report successful homoepitaxial growth of N-polar AlN by …
Properties for thermally conductive interfaces with wide band gap materials
S Khan, F Angeles, J Wright… - … Applied Materials & …, 2022 - ACS Publications
The goal of this study is to determine how bulk vibrational properties and interfacial structure
affect thermal transport at interfaces in wide band gap semiconductor systems. Time-domain …
affect thermal transport at interfaces in wide band gap semiconductor systems. Time-domain …
[HTML][HTML] High thermal conductivity and ultrahigh thermal boundary conductance of homoepitaxial AlN thin films
Wurtzite aluminum nitride (AlN) has attracted increasing attention for high-power and high-
temperature operations due to its high piezoelectricity, ultrawide-bandgap, and large …
temperature operations due to its high piezoelectricity, ultrawide-bandgap, and large …
[HTML][HTML] Polarization-induced 2D hole gases in pseudomorphic undoped GaN/AlN heterostructures on single-crystal AlN substrates
A high-conductivity two-dimensional (2D) hole gas is the enabler of wide-bandgap p-
channel transistors. Compared to commonly used AlN template substrates with high …
channel transistors. Compared to commonly used AlN template substrates with high …
AlN quasi-vertical Schottky barrier diode on AlN bulk substrate using Al0. 9Ga0. 1N current spreading layer
An aluminum nitride (AlN) quasi-vertical Schottky barrier diode (SBD) was fabricated on an
AlN bulk substrate. An undoped AlN layer, a Si-doped Al 0.9 Ga 0.1 N current spreading …
AlN bulk substrate. An undoped AlN layer, a Si-doped Al 0.9 Ga 0.1 N current spreading …
[HTML][HTML] MBE growth and donor doping of coherent ultrawide bandgap AlGaN alloy layers on single-crystal AlN substrates
Single-crystal Aluminum Nitride (AlN) crystals enable the epitaxial growth of ultrawide
bandgap Al (Ga) N alloys with drastically lower extended defect densities. Here, we report …
bandgap Al (Ga) N alloys with drastically lower extended defect densities. Here, we report …
[HTML][HTML] Molecular beam homoepitaxy of N-polar AlN on bulk AlN substrates
N-polar AlN epilayers were grown on the N-face of single-crystal bulk AlN substrates by
plasma-assisted molecular beam epitaxy. A combination of in situ thermal deoxidation and …
plasma-assisted molecular beam epitaxy. A combination of in situ thermal deoxidation and …